Semiconductor device

ABSTRACT

A semiconductor device having a novel structure is provided. The semiconductor device includes a first p-type transistor, a second n-type transistor, a third transistor, and a fourth transistor. One of a source and a drain of the third transistor is connected to a wiring supplying first potential, and the other is connected to one of a source and a drain of the first transistor. One of a source and a drain of the second transistor is connected to the other of the source and the drain of the first transistor, and the other is connected to one of a source and a drain of the fourth transistor. The other of the source and the drain of the fourth transistor is connected to a wiring supplying second potential lower than the first potential. An oxide semiconductor material is used in channel formation regions of the third transistor and the fourth transistor.

TECHNICAL FIELD

The present invention relates to a semiconductor device. In particular,the present invention relates to a semiconductor device including aninverter circuit. The present invention also relates to an electronicdevice including the semiconductor device.

BACKGROUND ART

In recent years, a semiconductor device with low power consumption hasstarted to be used as a component in an electronic device for areduction in the power consumption of the electronic device. Anelectronic device includes a variety of circuits such as a CPU, aninterface circuit, and a memory element. These circuits are connected byan input circuit, an output circuit, or an input/output circuit.

As an input circuit, an output circuit, and an input/output circuit, abuffer circuit or a three-state inverter (also referred to as “tri-stateinverter”) circuit is used. In the three-state inverter circuit, outputis set to the following three states: “High (HI),” “Low (LO),” and “Highimpedance (HIZ).”

“High” of the three-state inverter circuit means that the potential ofan output terminal is set to the highest potential of the power supplyvoltage terminal; “Low” thereof means that the potential of the outputterminal is set to the lowest potential; and “High impedance” thereofmeans that the output terminal is set in a floating state.

Transistors included in a three-state inverter each have leakagecurrent, so that leakage of charges or inflow of charges occurs evenwhen the transistor is not selected. Thus, even when the three-stateinverter is brought into a high impedance state, leakage current flowsto an output terminal through the transistor included in the three-stateinverter, which results in an insufficient reduction in powerconsumption. Further, voltage drop occurs, which causes malfunction.

Patent Document 1 discloses a flip-flop circuit using a three-stateinverter in which a transistor with high threshold voltage and atransistor with low threshold voltage are provided together to reduceleakage current flowing when the flip-flip circuit does not operate.

However, in Patent Document 1, high power supply voltage is needed inconsideration of the transistor with high threshold voltage in order tosecure the operation of the transistor with high threshold voltage.Further, the transistors are each thought to be a transistor formedusing a silicon material, and leakage current is kept flowing in thetransistors even when the transistors are turned off. Thus, a sufficientreduction in power consumption is not achieved.

REFERENCE

-   [Patent Document 1] Japanese Published Patent Application No.    2001-223563

DISCLOSURE OF INVENTION

In view of the above problem, an object of one embodiment of thedisclosed invention is to provide a semiconductor device in whichleakage current in high impedance can be suppressed to reduce powerconsumption.

Another object of one embodiment of the disclosed invention is toprovide a semiconductor device in which an increase in size of a circuitcan be suppressed and leakage current can be suppressed.

Another object of one embodiment of the disclosed invention is toprovide a semiconductor device in which a circuit can be downsized andleakage current can be suppressed.

In the disclosed invention, a semiconductor device is formed using apurified oxide semiconductor. A transistor formed using a purified oxidesemiconductor has extremely small leakage current; thus, powerconsumption can be reduced. Further, malfunctions of the semiconductordevice at the time of high impedance due to leakage current can beprevented.

One embodiment of the disclosed invention is a semiconductor devicewhich includes a first p-type transistor, a second n-type transistor, athird transistor, and a fourth transistor. A gate of the firsttransistor is electrically connected to a gate of the second transistor.One of a source and a drain of the first transistor is electricallyconnected to one of a source and a drain of the second transistor. Oneof a source and a drain of the third transistor is electricallyconnected to the other of the source and the drain of the firsttransistor. The other of the source and the drain of the thirdtransistor is electrically connected to a high-potential wiring. A gateof the third transistor is electrically connected to a gate of thefourth transistor. One of a source and a drain of the fourth transistoris electrically connected to the other of the source and the drain ofthe second transistor. The other of the source and the drain of thefourth transistor is electrically connected to a low-potential wiring.Channel formation regions of the third transistor and the fourthtransistor are each formed using an oxide semiconductor material.

In the above structure, the third transistor and the fourth transistorcan be provided over the first transistor and the second transistor.

Another embodiment of the disclosed invention is a semiconductor devicewhich includes a first p-type transistor, a second n-type transistor, athird transistor, a fourth transistor, a fifth transistor, and acapacitor. A gate of the first transistor is electrically connected to agate of the second transistor. One of a source and a drain of the firsttransistor is electrically connected to one of a source and a drain ofthe second transistor. One of a source and a drain of the thirdtransistor is electrically connected to the other of the source and thedrain of the first transistor. The other of the source and the drain ofthe third transistor is electrically connected to a high-potentialwiring. A gate of the third transistor is electrically connected to afirst terminal of the capacitor and one of a source and a drain of thefifth transistor. One of a source and a drain of the fourth transistoris electrically connected to the other of the source and the drain ofthe second transistor. The other of the source and the drain of thefourth transistor is electrically connected to a low-potential wiring. Agate of the fourth transistor is electrically connected to a secondterminal of the capacitor and a first wiring. The other of the sourceand the drain of the fifth transistor is electrically connected to thehigh-potential wiring. A gate of the fifth transistor is electricallyconnected to a second wiring. An oxide semiconductor is used at least inthe third transistor, the fourth transistor, and the fifth transistor.

Another embodiment of the disclosed invention is a semiconductor devicewhich includes a first p-type transistor, a second n-type transistor, athird transistor, a fourth transistor, a fifth transistor, a sixthtransistor, and a capacitor. A gate of the first transistor iselectrically connected to a gate of the second transistor. One of asource and a drain of the first transistor is electrically connected toone of a source and a drain of the second transistor. One of a sourceand a drain of the third transistor is electrically connected to theother of the source and the drain of the first transistor. The other ofthe source and the drain of the third transistor is electricallyconnected to a high-potential wiring. A gate of the third transistor iselectrically connected to a first terminal of the capacitor, one of asource and a drain of the fifth transistor, and one of a source and adrain of the sixth transistor. One of a source and a drain of the fourthtransistor is electrically connected to the other of the source and thedrain of the second transistor. The other of the source and the drain ofthe fourth transistor is electrically connected to a low-potentialwiring. A gate of the fourth transistor is electrically connected to asecond terminal of the capacitor and a first wiring. The other of thesource and the drain of the fifth transistor is electrically connectedto the high-potential wiring. A gate of the fifth transistor iselectrically connected to a second wiring. The other of the source andthe drain of the sixth transistor is electrically connected to alow-potential wiring. A gate of the sixth transistor is electricallyconnected to a third wiring. An oxide semiconductor is used at least inthe third transistor, the fourth transistor, the fifth transistor, andthe sixth transistor.

In the above structure, the third transistor and the fourth transistorcan be provided over the first transistor and the second transistor.Furthermore, the capacitor can be provided over the third transistor andthe fourth transistor.

In the above structure, a material other than an oxide semiconductor canbe used in a transistor other than the transistors including an oxidesemiconductor.

In this specification and the like, a “semiconductor device” generallyrefers to a device which can function by utilizing semiconductorcharacteristics: an electro-optical device, a liquid crystal displaydevice, a light-emitting device, a semiconductor circuit, and anelectronic device are all included in the category of the semiconductordevice.

Functions of a “source” and a “drain” are sometimes replaced with eachother when a transistor of opposite polarity is used or when thedirection of current flowing is changed in circuit operation, forexample. Therefore, the terms “source” and “drain” can be used to denotethe drain and the source, respectively, in this specification.

Note that in this specification and the like, the term “electricallyconnected” includes the case where components are connected through anobject having any electric function. There is no particular limitationon an “object having any electric function” as long as electric signalscan be transmitted and received between components that are connectedthrough the object.

Examples of an “object having any electric function” are a switchingelement such as a transistor, a resistor, an inductor, a capacitor, andan element with a variety of functions as well as an electrode and awiring.

In the semiconductor device according to one embodiment of the presentinvention, an oxide semiconductor material is used in at least one ofthe channel formation regions of the transistors. This makes it possibleto suppress leakage current and achieve a reduction in the powerconsumption of the semiconductor device.

In one embodiment of the disclosed invention, a voltage application unitis additionally provided for the gate of the first transistor includingan oxide semiconductor which is connected to the high-potential wiringof a three-state inverter including the first to fourth transistors, sothat a decrease in the potential of the source of the first transistorfrom Vdd by threshold voltage of the first transistor can be suppressed.

In one embodiment of the disclosed invention, an oxide semiconductormaterial is used in at least one of the channel formation regions of thetransistors included in a three-state inverter. Further, by providingthe transistor including an oxide semiconductor and a transistorincluding a material other than an oxide semiconductor so as to overlapwith each other, the size of the semiconductor device can be reduced.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1A and 1B illustrate an example of a semiconductor device and anexample of a timing chart thereof, respectively.

FIGS. 2A to 2C illustrate examples of semiconductor devices.

FIGS. 3A and 3B illustrate an example of a semiconductor device and anexample of a timing chart thereof, respectively.

FIGS. 4A and 4B illustrate an example of a semiconductor device and anexample of a timing chart thereof, respectively.

FIGS. 5A and 5B illustrate examples of semiconductor devices.

FIGS. 6A and 6B illustrate examples of semiconductor devices.

FIGS. 7A to 7D illustrate an example of a manufacturing process of asemiconductor device.

FIGS. 8A to 8C illustrate an example of a manufacturing process of thesemiconductor device.

FIGS. 9A to 9D illustrate an example of a manufacturing process of thesemiconductor device.

FIGS. 10A to 10C are each a cross-sectional view illustrating astructure of a transistor including an oxide semiconductor.

FIGS. 11A and 11B are each a cross-sectional view illustrating astructure of a transistor including an oxide semiconductor.

FIGS. 12A to 12E illustrate structures of oxide materials.

FIGS. 13A to 13C illustrate a structure of an oxide material.

FIGS. 14A to 14C illustrate a structure of an oxide material.

FIGS. 15A and 15B illustrate structures of oxide semiconductormaterials.

FIG. 16 illustrates a CPU.

FIG. 17 illustrates a portable electronic device.

FIG. 18 illustrates an e-book reader.

FIG. 19 shows relation between gate voltage and field-effect mobility.

FIGS. 20A to 20C each show relation between gate voltage and draincurrent.

FIGS. 21A to 21C each show relation between gate voltage and draincurrent.

FIGS. 22A to 22C each show relation between gate voltage and draincurrent.

FIGS. 23A to 23C each show characteristics of a transistor.

FIGS. 24A and 24B each show characteristics of a transistor.

FIGS. 25A and 25B each show characteristics of a transistor.

FIG. 26 shows temperature dependence of off-state current of atransistor.

FIGS. 27A to 27E are formulas for calculating mobility.

BEST MODE FOR CARRYING OUT THE INVENTION

Examples of the embodiment of the present invention will be specificallydescribed with reference to the drawings. In the structures describedbelow, the same portions or portions having similar functions aredenoted by the same reference numerals in different drawings, anddescription thereof will not be repeated.

The present invention is not limited to the description below and it isreadily understood by those skilled in the art that the modes anddetails of the present invention can be modified in various ways withoutdeparting from the spirit and scope of the present invention. Therefore,the present invention should not be construed as being limited to thedescription in the embodiments described below.

Note that the position, the size, the range, or the like of eachstructure illustrated in drawings and the like is not accuratelyrepresented in some cases for easy understanding. Therefore, thedisclosed invention is not necessarily limited to the position, size,range, or the like as disclosed in the drawings and the like.

In this specification and the like, ordinal numbers such as “first,”“second,” and “third” are used in order to avoid confusion amongcomponents, and the terms do not mean limitation of the number ofcomponents.

In this specification and the like, “voltage” and “potential” are usedin the same meaning in some cases.

Embodiment 1

In this embodiment, a structure of a semiconductor device according toone embodiment of the disclosed invention will be described withreference to FIGS. 1A and 1B. Note that in each of the circuit diagrams,“OS” is written beside a transistor in order to indicate that thetransistor includes an oxide semiconductor.

FIG. 1A illustrates a semiconductor device of this embodiment. Asemiconductor device 100 includes a transistor 110, a transistor 111, atransistor 112, and a transistor 113. The transistor 110 has p-typeconductivity, and the transistor 111, the transistor 112, and thetransistor 113 have n-type conductivity. The semiconductor device 100described here can also be referred to as a “three-state invertercircuit,” a “tri-state inverter circuit,” or a “signal processingcircuit.”

A gate of the transistor 110 is electrically connected to a gate of thetransistor 111. One of a source and a drain of the transistor 110 iselectrically connected to one of a source and a drain of the transistor111.

One of a source and a drain of the transistor 112 is electricallyconnected to the other of the source and the drain of the transistor110. The other of the source and the drain of the transistor 112 iselectrically connected to a high-potential wiring (“Vdd” in FIG. 1A,also referred to as “high-potential line,” “power supply voltage line,”“voltage line,” “power supply,” “power supply line,” “Vdd,” “wiring,”“wiring to which first potential is supplied,” “wiring having a functionof supplying first potential,” and the like). A gate of the transistor112 is electrically connected to a gate of the transistor 113.

One of a source and a drain of the transistor 113 is electricallyconnected to the other of the source and the drain of the transistor111. The other of the source and the drain of the transistor 113 iselectrically connected to a low-potential wiring (Vss in FIG. 1A, alsoreferred to as “low-potential line,” “ground wiring,” “GND,” “Vss,”“grounding wiring,” “wiring,” “wiring to which second potential issupplied,” “wiring having a function of supplying second potential,”“wiring to which second potential lower than first potential issupplied,” “wiring having a function of supplying second potential lowerthan first potential,” and the like). The low-potential wiring is awiring to which potential lower than the potential supplied to thehigh-potential wiring is supplied and may be grounded.

A wiring is electrically connected to the gates of the transistor 112and the transistor 113, and an enable signal (EN) is supplied to thewiring.

A wiring is electrically connected to the gates of the transistor 110and the transistor 111, and an input signal (IN) is supplied to thewiring. The one of the source and the drain of the transistor 110 andthe one of the source and the drain of the transistor 111 areelectrically connected to an output terminal 116, so that an outputsignal is output.

When the enable signal is at “High” level, the transistor 112 and thetransistor 113 are both turned on, and the transistor 110 and thetransistor 111 can be regarded as forming a general inverter 115.

FIG. 1B is a timing chart of FIG. 1A.

In the case where a “High” signal is output to the output terminal 116,the “High” signal is input as an enable signal to turn on thetransistors 112 and 113. By inputting a “Low” signal as an input signal(IN), the transistor 111 is turned off and the transistor 110 is turnedon. Since the transistors 110 and 112 are in a conduction state, a“High” level signal is supplied from Vdd to the output terminal 116.

In the case where a “Low” signal is output to the output terminal 116,the “High” signal is input as an enable signal to turn on thetransistors 112 and 113. By inputting a “High” signal as an input signal(IN), the transistor 111 is turned on and the transistor 110 is turnedoff. Since the transistors 111 and 113 are in a conduction state, a“Low” level signal is supplied from Vss to the output terminal 116.

In the case where output is brought into a high impedance state, a “Low”signal is input as an enable signal to turn off the transistors 112 and113. Accordingly, the supply of potential from Vdd to the outputterminal 116 and from Vss to the output terminal 116 is blocked, so thatthe output is brought into a high impedance state.

Transistors having extremely small off-state current are used as thetransistor 112 and the transistor 113. By using an oxide semiconductorin a transistor, the transistor can have small off-state current. Thetransistor including an oxide semiconductor can have off-state currentmuch smaller than off-state current of a transistor including siliconhaving crystallinity. The off-state current per unit channel width (1μm) of the transistor 112 and the transistor 113 at room temperature(25° C.) may be less than or equal to 100 zA (zeptoampere), preferablyless than or equal to 10 zA, more preferably less than or equal to 1 zA(1×10⁻²¹ A). Hence, in the case where an enable signal is at “Low” leveland output is in a high impedance state, supply of potential from thehigh-potential wiring and the low-potential wiring to the outputterminal 116 through the transistor 110 and the transistor 111 can beblocked, which makes it possible to prevent generation of leakagecurrent. Accordingly, the power consumption of the semiconductor devicecan be reduced. Note that the transistor 112 and the transistor 113 areenhancement-mode (normally-off) n-channel transistors.

Note that in the above structure, connection between the wirings may bephysically disconnected using a MEMS switch instead of the transistor sothat leakage current from power supply potential can be prevented.

In FIG. 1A, each of the transistors 110 and 111 can be a transistor inwhich a channel region is formed in a layer or a substrate which isformed using a semiconductor other than an oxide semiconductor. Forexample, each of the transistors 110 and 111 can be a transistor inwhich a channel region is formed in a silicon layer or a siliconsubstrate.

The transistor 110 can also be formed using an oxide semiconductormaterial as in the case of the transistors 112 and 113. The transistor111 can also be formed using an oxide semiconductor material as in thecase of the transistors 112 and 113.

For example, in the case where the transistor 110 and/or the transistor111 are/is formed using an oxide semiconductor material, the transistor110 and/or the transistor 111 are/is preferably formed using anIn—Sn—Zn-based oxide semiconductor having high field-effect mobility.Further, the transistor 112 and the transistor 113 are preferably formedusing an In—Ga—Zn-based oxide semiconductor having significantly smalloff-state current.

Although the semiconductor device of this embodiment is described withreference to FIGS. 1A and 1B, the structure of the semiconductor deviceis not limited to the structure illustrated in FIG. 1A. FIGS. 2A to 2Ceach illustrate a semiconductor device in which arrangement of thetransistors 110 to 113 is changed.

In FIG. 2A, one of the source and the drain of the p-channel transistor110 is electrically connected to the high-potential wiring Vdd, and oneof the source and the drain of the n-channel transistor 111 iselectrically connected to the low-potential wiring. The other of thesource and the drain of the transistor 110 is electrically connected tothe output terminal 116 through the transistor 112 including an oxidesemiconductor material. The other of the source and the drain of thetransistor 111 is electrically connected to the output terminal 116through the transistor 113 including an oxide semiconductor material.

A wiring is electrically connected to gates of the transistor 112 andthe transistor 113, and an enable signal (EN) is supplied to the wiring.When the transistor 112 and the transistor 113 are on, the transistor110 and the transistor 111 can be regarded as forming a general inverterinverter.

In FIG. 2A, the transistor 112 and the transistor 113 are formed usingan oxide semiconductor material; thus, when the transistor 112 and thetransistor 113 are turned off so that output is brought into a highimpedance state, output of leakage current from the high-potentialwiring Vdd or the low-potential wiring Vss to the output terminal can besuppressed. The transistors 112 and 113 including an oxide semiconductorare provided closer to the output terminal than the transistors 110 and111, whereby output of an abnormal signal to the output terminal 116immediately after the transistors 112 and 113 are turned off can be moreprevented than in the case of FIG. 1A.

In FIG. 2B, one of the source and the drain of the p-channel transistor110 is electrically connected to the high-potential wiring Vdd throughthe transistor 112 including an oxide semiconductor, and one of thesource and the drain of the n-channel transistor 111 is electricallyconnected to the low-potential wiring Vss. The other of the source andthe drain of the transistor 111 is electrically connected to the outputterminal 116 and the other of the source and the drain of the transistor110 through the transistor 113 including an oxide semiconductor.

A wiring is electrically connected to gates of the transistor 112 andthe transistor 113, and an enable signal is supplied to the wiring. Whenthe transistor 112 and the transistor 113 are on, the transistor 110 andthe transistor 111 can be regarded as forming a general inverter.

In FIG. 2B, the transistor 112 and the transistor 113 are formed usingan oxide semiconductor material; thus, when the transistor 112 and thetransistor 113 are turned off so that output is brought into a highimpedance state, output of leakage current from the high-potentialwiring Vdd or the low-potential wiring Vss to the output terminal can besuppressed. The transistor 112 is provided closer to the high-potentialwiring Vdd than the transistor 110; thus, leakage current which can flowthrough the transistor 110 can be prevented by the transistor 112without fail. In the case where the transistor 111 is turned on and a“Low” signal is output to the output terminal 116, and then a “Low”signal is output as an enable signal and the transistors 112 and 113 areturned off, leakage current might flow to the output terminal 116through the transistor 111. However, when the arrangement illustrated inFIG. 2B is employed, current leaking from the transistor 111 can beblocked by the transistor 113 without fail.

In FIG. 2C, one of the source and the drain of the n-channel transistor111 is electrically connected to the low-potential wiring Vss throughthe transistor 113 including an oxide semiconductor, and one of thesource and the drain of the p-channel transistor 110 is electricallyconnected to the high-potential wiring Vdd. The other of the source andthe drain of the transistor 110 is electrically connected to the outputterminal 116 and the other of the source and the drain of the transistor111 through the transistor 112 including an oxide semiconductor.

A wiring is electrically connected to gates of the transistor 112 andthe transistor 113, and an enable signal is supplied to the wiring. Whenthe transistor 112 and the transistor 113 are on, the transistor 110 andthe transistor 111 can be regarded as forming a general inverter.

In FIG. 2C, the transistor 112 and the transistor 113 are formed usingan oxide semiconductor material; thus, when the transistor 112 and thetransistor 113 are turned off so that output is brought into a highimpedance state, output of leakage current from the high-potentialwiring Vdd or the low-potential wiring Vss to the output terminal can besuppressed. The transistor 113 is provided closer to the low-potentialwiring Vss than the transistor 111; thus, leakage current which can flowthrough the transistor 111 can be prevented by the transistor 113without fail. In the case where the transistor 110 is turned on and a“High” signal is output to the output terminal 116, and then a “Low”signal is output as an enable signal and the transistors 112 and 113 areturned off, leakage current might flow to the output terminal 116through the transistor 110. However, when the arrangement illustrated inFIG. 2C is employed, current leaking from the transistor 110 can beblocked by the transistor 112 without fail.

As described above, the connection relation between the transistors 110to 113 can be changed as appropriate. Note that as illustrated in FIG.1A, the transistor 112 and the transistor 113, which include an oxidesemiconductor, are preferably provided closer to the power supplypotential Vdd and Vss, respectively. Alternatively, the transistor 110may include an oxide semiconductor, and the transistor 111 may includean oxide semiconductor.

In the semiconductor device of this embodiment, an oxide semiconductoris used in the channel regions of the transistors included in thesemiconductor device, whereby leakage current from a power supply to theoutput terminal or the transistor including a material other than anoxide semiconductor can be suppressed. Thus, the power consumption ofthe semiconductor device can be reduced.

Embodiment 2

In this embodiment, a semiconductor device having a structure differentfrom the structures of the semiconductor device described in Embodiment1 will be described with reference to FIGS. 3A and 3B.

A semiconductor device 300 includes the transistor 110, the transistor111, the transistor 112, the transistor 113, a transistor 310, acapacitor 311, and a resistor 312. The transistor 110 has p-typeconductivity, and the transistor 111, the transistor 112, the transistor113, and the transistor 310 have n-type conductivity.

The gate of the transistor 110 is electrically connected to the gate ofthe transistor 111. One of the source and the drain of the transistor110 is electrically connected to one of the source and the drain of thetransistor 111.

One of the source and the drain of the transistor 112 is electricallyconnected to the other of the source and the drain of the transistor110. The other of the source and the drain of the transistor 112 iselectrically connected to a high-potential wiring Vdd1. The gate of thetransistor 112 is electrically connected to one of a source and a drainof the transistor 310, one terminal of the capacitor 311, and oneterminal of the resistor 312.

One of the source and the drain of the transistor 113 is electricallyconnected to the other of the source and the drain of the transistor111, and the other of the source and the drain of the transistor 113 iselectrically connected to a low-potential wiring Vss1. The gate of thetransistor 113 is electrically connected to the other terminal of thecapacitor 311.

The other of the source and the drain of the transistor 310 iselectrically connected to a high-potential wiring Vdd2. Vdd1 and Vdd2may be supplied with power from a common power supply or from differentpower supplies. For example, Vdd2 may have potential higher or lowerthan Vdd1, or may have potential higher or lower than the potential ofthe sum of the potential of Vdd1 and threshold voltage of the transistor112.

The other terminal of the resistor 312 is electrically connected to thelow-potential wiring Vss. Although Vss1 and Vss2 are supplied with powerfrom a common power supply here, Vss1 and Vss2 may be supplied withpower from different power supplies.

A wiring is electrically connected to the gate of the transistor 113 andthe other terminal of the capacitor 311, and a first enable signal (EN1)is supplied to the wiring.

A wiring is electrically connected to a gate of the transistor 310, anda second enable signal (EN2) is supplied to the wiring.

Next, operation of FIG. 3A will be described. FIG. 3B is a timing chartof the semiconductor device illustrated in FIG. 3A.

The case of outputting a “High” or “Low” signal to the output terminal116 will be described.

First, a “High” signal is output as the second enable signal to turn onthe transistor 310. At this time, potential divided in accordance withthe ratio of the resistance value of the transistor 310 to theresistance value of the resistor 312 is supplied to a node 313.

After that, a “High” signal is input as the first enable signal to turnon the transistor 112 and the transistor 113, so that the transistor 112and the transistor 113 are in a conduction state. At this time,potential in which the “High” level signal as the first enable signal isadded to the potential of the node 313 is supplied to the gate of thetransistor 112.

In the case where a “High” signal is output to the output terminal 116,a “Low” signal is input as an input signal (IN), so that the transistor111 is turned off and the transistor 110 is turned on. Since thetransistor 110 and the transistor 112 are in a conduction state, a“High” level signal is supplied from Vdd to the output terminal 116.

In the case where a “Low” signal is output to the output terminal 116, a“High” signal is input as an input signal, so that the transistor 111 isturned on and the transistor 110 is turned off. Since the transistor 111and the transistor 113 are in a conduction state, a “Low” level signalis supplied from Vss to the output terminal 116.

In the case where output is brought into a high impedance state, a “Low”signal is input as the second enable signal to turn off the transistor310, and a “Low” signal is input as the first enable signal to turn offthe transistor 112 and the transistor 113. Accordingly, supply ofpotential from the high-potential wiring Vdd1 to the output terminal 116and from the low-potential wiring Vss1 to the output terminal 116 isblocked, so that the output is brought into a high impedance state.

Through the above operation, the signals in the three states of “High,”“Low,” and “High impedance” can be output to the output terminal 116.

Note that in FIG. 3B, the “Low” signal is input immediately after the“High” signal is input as the second enable signal to turn on thetransistor 310. In contrast, the “High” signal may be input as the firstenable signal while the “High” signal is being input as the secondenable signal, so that the transistor 112 and the transistor 113 areturned on to be in a conduction state. Also in this case, potential inwhich the “High” level signal as the first enable signal is added to thepotential of the node 313 is supplied to the gate of the transistor 112.In the case where output is brought into a high impedance state, a“High” signal continuing to be input as the second enable signal isswitched to a “Low” signal to turn off the transistor 310. After that, a“Low” signal may be input as the first enable signal to turn off thetransistor 112 and the transistor 113. Accordingly, supply of potentialfrom the high-potential wiring Vdd1 to the output terminal 116 and fromthe Vss1 to the output terminal 116 is blocked, so that the output isbrought into a high impedance state.

In the semiconductor device of this embodiment, an oxide semiconductorhaving extremely small off-state current is used in the transistor 112,the transistor 113, and the transistor 310, and a material other than anoxide semiconductor is used in the transistor 110 and the transistor111.

In the case where a “Low” signal is input as the first enable signal toturn off the transistor 112 and the transistor 113, so that output isbrought into a high impedance state, a path from the high-potentialwiring Vdd1 to the output terminal 116 can be blocked by the transistor112 including an oxide semiconductor. Accordingly, leakage current doesnot flow, which results in a reduction in power consumption. Inaddition, output of an abnormal signal due to leakage current can besuppressed.

Further, a path from the low-potential wiring Vss1 to the outputterminal 116 can be blocked by the transistor 113 including an oxidesemiconductor. Accordingly, leakage current does not flow, which resultsin a reduction in power consumption. In addition, output of an abnormalsignal due to leakage current can be suppressed.

An oxide semiconductor is also used in the transistor 310; thus, leakagecurrent from Vdd2 can also be prevented.

Further, in the semiconductor device of this embodiment, in the casewhere a “High” signal is output from the output terminal 116, a decreasein the potential of the source of the transistor 112 from Vdd1 bythreshold voltage of the transistor 112 can be suppressed, so that thepotential of Vdd1 can be effectively supplied to the transistor 110.

Specifically, for example, a “High” signal is input as the second enablesignal to turn on the transistor 310, and shortly after that the “High”signal is switched to a “Low” signal, whereby a decrease in thepotential of the source of the transistor 112 from Vdd1 by thresholdvoltage of the transistor 112 can be suppressed utilizing apredetermined potential which is the potential of the node 313 beforecompletely dropping to Vss2.

This embodiment can be implemented in combination with any of the otherembodiments as appropriate.

Embodiment 3

In this embodiment, a semiconductor device having a structure differentfrom the structures of the semiconductor devices described inEmbodiments 1 and 2 will be described with reference to FIGS. 4A and 4B.

A semiconductor device 400 illustrated in FIG. 4A includes thetransistor 110, the transistor 111, the transistor 112, the transistor113, a transistor 310, a transistor 410, and the capacitor 311.

The transistor 110 has p-type conductivity, and the transistor 111, thetransistor 112, the transistor 113, the transistor 310, and thetransistor 410 have n-type conductivity.

The gate of the transistor 110 is electrically connected to the gate ofthe transistor 111. One of the source and the drain of the transistor110 is electrically connected to one of the source and the drain of thetransistor 111.

One of the source and the drain of the transistor 112 is electricallyconnected to the other of the source and the drain of the transistor110. The other of the source and the drain of the transistor 112 iselectrically connected to a high-potential wiring Vdd1. The gate of thetransistor 112 is electrically connected to one of the source and thedrain of the transistor 310, one of a source and a drain of thetransistor 410, and one terminal of the capacitor 311.

One of the source and the drain of the transistor 113 is electricallyconnected to the other of the source and the drain of the transistor111, and the other of the source and the drain of the transistor 113 iselectrically connected to a low-potential wiring Vss1. The gate of thetransistor 113 is electrically connected to the other terminal of thecapacitor 311.

The other of the source and the drain of the transistor 310 iselectrically connected to a high-potential wiring Vdd2. Vdd1 and Vdd2may be supplied with power from a common power supply or from differentpower supplies. For example, Vdd2 may have potential higher or lowerthan Vdd1, or may have potential higher or lower than the potential ofthe sum of the potential of Vdd1 and threshold voltage of the transistor112.

The other of the source and the drain of the transistor 410 iselectrically connected to the low-potential wiring Vss2. Although Vss1and Vss2 are supplied with power from a common power supply here, Vss1and Vss2 may be supplied with power from different power supplies.

A wiring is electrically connected to the gate of the transistor 113 andthe other terminal of the capacitor 311, and a first enable signal (EN1)is supplied to the wiring.

A wiring is electrically connected to a gate of the transistor 310, anda second enable signal (EN2) is supplied to the wiring.

A wiring is electrically connected to a gate of the transistor 410, anda third enable signal (EN3) is supplied to the wiring.

An input signal (IN) is supplied to the gates of the transistor 110 andthe transistor 111.

FIG. 4B is a timing chart of FIG. 4A.

First, the case of outputting a “High” or “Low” signal to the outputterminal 116 will be described.

First, a “Low” signal is input as the third enable signal to turn offthe transistor 410, and a “High” signal is input as the second enablesignal to turn on the transistor 310.

Potential obtained by subtracting the threshold voltage of thetransistor 310 from the potential supplied to the high-potential wiringVdd2 is supplied to the gate of the transistor 112.

After that, a “Low” signal is input as the second enable signal to turnoff the transistor 310, whereby charge is retained between the gate ofthe transistor 112 and the one terminal of the capacitor 311.

Then, a “High” signal is input as the first enable signal to bring thetransistors 112 and 113 into a conduction state.

In the case where a “High” signal is output to the output terminal 116,a “Low” signal is input as an input signal, so that the transistor 111is turned off and the transistor 110 is turned on. Since the transistor110 and the transistor 112 are in a conduction state, a “High” levelsignal is supplied from Vdd to the output terminal 116.

In the case where a “Low” signal is output to the output terminal 116, a“High” signal is input as an input signal, so that the transistor 111 isturned on and the transistor 110 is turned off. Since the transistor 111and the transistor 113 are in a conduction state, a “Low” level signalis supplied from Vss to the output terminal 116.

In the case where output is brought into a high impedance state, a “Low”signal is input as the second enable signal to turn off the transistor310, and a “High” signal is input as the third enable signal to turn onthe transistor 410. Accordingly, the charge retained at the one terminalof the capacitor 311 flows to Vss2 through the transistor 410.

After that, a “Low” signal is input as the first enable signal to turnoff the transistors 112 and 113. Accordingly, supply of potential fromthe high-potential wiring Vdd1 to the output terminal 116 and from thelow-potential wiring Vss1 to the output terminal 116 is blocked, so thatthe output is brought into a high impedance state.

Through the above operation, the signals in the three states of “High,”“Low,” and “High impedance” can be output to the output terminal 116.

In the case where a “High” signal is input as the second enable signaland a “Low” signal is input as the third enable signal in order toaccumulate charge in the capacitor 311, the first enable signal may be a“High” signal or a “Low” signal.

In the semiconductor device of this embodiment, an oxide semiconductorhaving extremely small off-state current is used in the transistor 112,the transistor 113, the transistor 310, and the transistor 410, and amaterial other than an oxide semiconductor is used in the transistor 110and the transistor 111.

In the case where a “Low” signal is input as the first enable signal toturn off the transistor 112 and the transistor 113, so that output isbrought into a high impedance state, a path from the high-potentialwiring Vdd1 to the output terminal 116 can be blocked by the transistor112 including an oxide semiconductor. Accordingly, leakage current doesnot flow, which results in a reduction in the power consumption. Inaddition, output of an abnormal signal due to leakage current can besuppressed.

Further, a path from the low-potential wiring Vss1 to the outputterminal 116 can be blocked by the transistor 113 including an oxidesemiconductor. Accordingly, leakage current does not flow, which resultsin a reduction in the power consumption. In addition, output of anabnormal signal due to leakage current can be suppressed.

An oxide semiconductor is also used in the transistor 310 and thetransistor 410; thus, leakage current from Vdd2 and Vss2 can also beprevented.

Further, in the semiconductor device of this embodiment, in the casewhere a “High” signal is output from the output terminal 116, a decreasein the potential of the source of the transistor 112 from Vdd1 bythreshold voltage of the transistor 112 can be suppressed, so that thepotential of Vdd1 can be effectively supplied to the transistor 110.

This embodiment can be implemented in combination with any of the otherembodiments as appropriate. For example, as illustrated in FIGS. 2A to2C, the arrangement of the transistors 110 to 113 can be changed.

Embodiment 4

In this embodiment, a semiconductor device having structures differentfrom the structures of the semiconductor devices described inEmbodiments 1 to 3 will be described with reference to FIGS. 5A and 5B.

A semiconductor device 500 includes the transistor 110, the transistor111, a transistor 512, the transistor 113, and an inverter 520.

FIGS. 5A and 5B are different from FIG. 1A in that the p-channeltransistor 512 including a material other than an oxide semiconductorand the inverter 520 are provided instead of the transistor 112including an oxide semiconductor, which is connected to thehigh-potential wiring Vdd.

In FIG. 5A, one of a source and a drain of the p-channel transistor 512is electrically connected to one of the source and the drain of thetransistor 110; the other of the source and the drain of the transistor512 is electrically connected to a high-potential wiring Vdd; and a gateof the transistor 512 is electrically connected to an output terminal ofthe inverter 520. A gate of the transistor 113 is electrically connectedto an input terminal of the inverter 520.

In FIG. 5B, the gate of the transistor 512 is electrically connected tothe input terminal of the inverter 520. The gate of the transistor 113is electrically connected to the output terminal of the inverter 520.

Description will be given below with reference to FIG. 5A. A wiring iselectrically connected to the input terminal of the inverter 520 and thegate of the transistor 113, so that an enable signal (EN) is supplied tothe wiring.

When the enable signal is at “High” level, the transistor 512 and thetransistor 113 are both turned on, and the transistor 110 and thetransistor 111 can be regarded as forming a general inverter 115.

A wiring is electrically connected to a gate of the transistor 110 and agate of the transistor 111, so that an input signal (IN) is supplied tothe wiring. The one of the source and the drain of the transistor 110and one of the source and the drain of the transistor 111 areelectrically connected to the output terminal 116, so that an outputsignal is output.

In the case where a “High” signal is output to the output terminal 116,the “High” signal is input as an enable signal to turn on thetransistors 512 and 113. By inputting a “Low” signal as an input signal(IN), the transistor 111 is turned off and the transistor 110 is turnedon. Since the transistors 110 and 112 are in a conduction state, a“High” level signal is supplied from Vdd to the output terminal 116.

In the case where a “Low” signal is output to the output terminal 116,the “High” signal is input as an enable signal to turn on thetransistors 512 and 113. By inputting a “High” signal as an input signal(IN), the transistor 111 is turned on and the transistor 110 is turnedoff. Since the transistors 111 and 113 are in a conduction state, a“Low” level signal is supplied from Vss to the output terminal 116.

In the case where output is brought into a high impedance state, a “Low”signal is input as the enable signal to turn off the transistors 512 and113. Accordingly, the supply of potential from Vdd to the outputterminal 116 and from Vss to the output terminal 116 is blocked, so thatthe output is brought into a high impedance state.

A transistor having extremely small off-state current is used as thetransistor 113. By using an oxide semiconductor in a transistor, thetransistor can have small off-state current. The transistor including anoxide semiconductor can have off-state current much smaller thanoff-state current of a transistor including silicon havingcrystallinity. In the case where output is in a high impedance state,leakage current between the low-potential wiring Vss and the outputterminal 116 can be prevented by the transistor 113 including an oxidesemiconductor.

This embodiment can be implemented in combination with any of the otherembodiments as appropriate.

Embodiment 5

In this embodiment, an example in which a semiconductor device isapplied to a bidirectional buffer circuit will be described withreference to FIGS. 6A and 6B.

A three-state inverter circuit 601 is illustrated in FIG. 6A. Any of thestructures described in Embodiments 1 to 4 can be applied to thethree-state inverter circuit.

FIG. 6B illustrates a semiconductor device 600 which is a bidirectionalbuffer circuit in which two three-state circuits are combined. Thesemiconductor device 600 includes a three-state inverter circuit 602 anda three-state inverter circuit 603. An output terminal of thethree-state inverter circuit 602 is electrically connected to an inputterminal of the three-state inverter circuit 603. Any of the structuresdescribed in Embodiments 1 to 4 can be applied to the three-stateinverter circuits 602 and 603 as appropriate. For example, the structureillustrated in FIG. 1A can be applied to the three-state invertercircuit 602, and the structure illustrated in FIG. 4A can be applied tothe three-state inverter circuit 603.

By applying any of the structures described in Embodiments 1 to 4 to thebidirectional buffer circuit described in this embodiment, leakagecurrent of the semiconductor device can be suppressed, so that the powerconsumption of the semiconductor device can be reduced.

This embodiment can be implemented in combination with any of the otherembodiments as appropriate.

Embodiment 6

In this embodiment, a method of manufacturing a semiconductor devicewill be described using a transistor in which a channel is formed in anoxide semiconductor layer and a transistor in which a channel is formedusing a material other than an oxide semiconductor as examples. In thisembodiment, the case where the transistor formed using a material otherthan an oxide semiconductor is a transistor in which a channel is formedin a silicon layer will be described as an example.

Note that the transistors formed using an oxide semiconductor, which aredescribed in Embodiments 1 to 5, can be formed in a manner similar tothat of a transistor 11 described in this embodiment. Further, thetransistors formed using a material other than an oxide semiconductor,which are described in Embodiments 1 to 5, can be formed in a mannersimilar to that of a transistor 133 described in this embodiment.Further, the capacitor included in the semiconductor device (thecapacitor 311 in FIG. 3A and FIG. 4A) can be formed in a manner similarto that of a capacitor 12 described in this embodiment.

First, as illustrated in FIG. 7A, an insulating film 701 and asemiconductor film 702 separated from a single crystal semiconductorsubstrate are formed over a substrate 700.

Although there is no particular limitation on a material that can beused as the substrate 700, it is necessary that the material have atleast heat resistance high enough to withstand heat treatment performedlater. For example, a glass substrate formed by a fusion process or afloat process, a quartz substrate, a semiconductor substrate, a ceramicsubstrate, or the like can be used as the substrate 700. In the casewhere a glass substrate is used and the temperature of heat treatmentperformed later is high, a glass substrate whose strain point is higherthan or equal to 730° C. is preferably used.

In this embodiment, an example in which the semiconductor film 702 isformed using single crystal silicon is given below as the method forforming the transistor 133.

Note that a specific example of a method for forming the single crystalsemiconductor film 702 is briefly described. First, an ion beamincluding ions which are accelerated by an electric field enters a bondsubstrate which is the single crystal semiconductor substrate and afragile layer which is fragile because of local disorder of the crystalstructure is formed in a region at a certain depth from a surface of thebond substrate.

The depth at which the fragile layer is formed can be adjusted by theacceleration energy of the ion beam and the angle at which the ion beamenters.

Then, the bond substrate and the substrate 700 which is provided withthe insulating film 701 are attached to each other so that theinsulating film 701 is sandwiched therebetween.

After the bond substrate and the substrate 700 overlap with each other,a pressure of approximately 1 N/cm² to 500 N/cm², preferably 11 N/cm² to20 N/cm² is applied to part of the bond substrate and part of thesubstrate 700 so that the substrates are attached to each other. Whenthe pressure is applied, bonding between the bond substrate and theinsulating film 701 starts from the parts, which results in bonding ofthe entire surface where the bond substrate and the insulating film 701are in close contact with each other.

After that, heat treatment is performed, so that microvoids that existin the fragile layer are combined and the microvoids increase in volume.

Accordingly, a single crystal semiconductor film which is part of thebond substrate is separated from the bond substrate along the fragilelayer.

The heat treatment is performed at a temperature not exceeding thestrain point of the substrate 700. Then, the single crystalsemiconductor film is processed into a desired shape by etching or thelike, so that the semiconductor film 702 can be formed.

In order to control the threshold voltage, an impurity element impartingp-type conductivity, such as boron, aluminum, or gallium, or an impurityelement imparting n-type conductivity, such as phosphorus or arsenic,may be added to the semiconductor film 702. An impurity element forcontrolling the threshold voltage may be added to the semiconductor filmwhich is not etched to have a predetermined shape or may be added to thesemiconductor film 702 which is etched to have a predetermined shape.Alternatively, the impurity element for controlling the thresholdvoltage may be added to the bond substrate. Alternatively, the impurityelement may be added to the bond substrate in order to roughly controlthe threshold voltage, and the impurity element may be further added tothe semiconductor film which is not etched to have a predetermined shapeor the semiconductor film 702 which is etched to have a predeterminedshape in order to finely control the threshold voltage.

Note that although an example in which a single crystal semiconductorfilm is used is described in this embodiment, the present invention isnot limited to this structure. For example, a bulk semiconductorsubstrate that is isolated by shallow trench isolation (STI) or the likemay be used. For example, a polycrystalline, microcrystalline, oramorphous semiconductor film which is formed over the insulating film701 by vapor deposition may be used. Alternatively, the semiconductorfilm may be crystallized by a known technique. As the known techniquesof crystallization, a laser crystallization method using a laser beamand a crystallization method using a catalytic element are given.Alternatively, a crystallization method using a catalytic element and alaser crystallization method may be used in combination. In the case ofusing a heat-resistant substrate such as a quartz substrate, it ispossible to combine any of the following crystallization methods: athermal crystallization method using an electrically heated oven, a lampheating crystallization method using infrared light, a crystallizationmethod using a catalytic element, and a high-temperature heating methodat approximately 950° C.

Next, as illustrated in FIG. 7B, a semiconductor layer 704 is formedusing the semiconductor film 702. Then, a gate insulating film 703 isformed over the semiconductor layer 704.

The gate insulating film 703 can be a single layer or a stack of layerscontaining silicon oxide, silicon nitride oxide, silicon oxynitride,silicon nitride, hafnium oxide, aluminum oxide, tantalum oxide, yttriumoxide, hafnium silicate (HfSi_(x)O_(y), (x>0, y>0)), hafnium silicate(HfSi_(x)O_(y)N_(z) (x>0, y>0, z>0)) to which nitrogen is added, hafniumaluminate (HfAl_(x)O_(y)N_(z), (x>0, y>0, z>0)) to which nitrogen isadded, or the like by, for example, a plasma CVD method or a sputteringmethod.

Note that, in this specification, an oxynitride refers to a material inwhich the oxygen content is higher than the nitrogen content, and anitride oxide refers to a material in which the nitrogen content ishigher than the oxygen content.

The thickness of the gate insulating film 703 can be, for example,greater than or equal to 1 nm and less than or equal to 100 nm,preferably greater than or equal to 10 nm and less than or equal to 50nm. In this embodiment, a single-layer insulating film containingsilicon oxide is formed as the gate insulating film 703 by a plasma CVDmethod.

Then, a gate electrode 707 is formed as illustrated in FIG. 7C.

A conductive film is formed and then is processed into a predeterminedshape, so that the gate electrode 707 can be formed. The conductive filmcan be formed by a CVD method, a sputtering method, a vapor depositionmethod, a spin coating method, or the like. For the conductive film,tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum(Al), copper (Cu), chromium (Cr), niobium (Nb), or the like can be used.An alloy containing any of the above metals as a main component or acompound containing any of the above metals may be used. Alternatively,the conductive film may be formed using a semiconductor such aspolycrystalline silicon doped with an impurity element such asphosphorus which imparts conductivity to the semiconductor film.

Note that although the gate electrode 707 is formed of a single-layerconductive film in this embodiment, this embodiment is not limited tothis structure. The gate electrode 707 may be formed of a plurality ofstacked conductive films.

As a combination of two conductive films, tantalum nitride or tantalumcan be used for a first conductive film and tungsten can be used for asecond conductive film. Other examples of the combination of twoconductive films are tungsten nitride and tungsten, molybdenum nitrideand molybdenum, aluminum and tantalum, and aluminum and titanium. Sincetungsten and tantalum nitride have high heat resistance, heat treatmentaimed at thermal activation can be performed in subsequent steps afterformation of the two conductive films. Alternatively, as a combinationof the two conductive films, for example, nickel silicide and silicondoped with an impurity element which imparts n-type conductivity,tungsten silicide and silicon doped with an impurity element whichimparts n-type conductivity, or the like may be used.

In the case of employing a three-layer structure in which three or moreconductive films are stacked, a stacked-layer structure of a molybdenumfilm, an aluminum film, and a molybdenum film is preferable.

A light-transmitting oxide conductive film of indium oxide, indium tinoxide, indium zinc oxide, zinc oxide, zinc aluminum oxide, zinc aluminumoxynitride, gallium zinc oxide, or the like can be used as the gateelectrode 707.

Alternatively, the gate electrode 707 may be selectively formed by adroplet discharge method without using a mask. A droplet dischargemethod is a method for forming a predetermined pattern by discharge orejection of a droplet containing a predetermined composition from apore, and includes an inkjet method in its category.

The gate electrode 707 can be formed in such a manner that theconductive film is etched into a desired tapered shape by an inductivelycoupled plasma (ICP) etching method in which the etching condition(e.g., the amount of electric power applied to a coil-shaped electrodelayer, the amount of electric power applied to an electrode layer on thesubstrate side, and the electrode temperature on the substrate side) iscontrolled as appropriate. Further, an angle and the like of the taperedshape may be controlled by the shape of a mask. Note that as an etchinggas, a chlorine-based gas such as chlorine, boron chloride, siliconchloride, or carbon tetrachloride; a fluorine-based gas such as carbontetrafluoride, sulfur fluoride, or nitrogen fluoride; or oxygen can beused as appropriate.

Next, as illustrated in FIG. 7D, an impurity element imparting oneconductivity is added to the semiconductor layer 704 with the gateelectrode 707 used as a mask, whereby a channel formation region 710overlapping with the gate electrode 707, and a pair of impurity regions709 between which the channel formation region 710 is placed are formedin the semiconductor layer 704.

In this embodiment, the case where an impurity element imparting p-typeconductivity (e.g., boron) is added to the semiconductor layer 704 isdescribed as an example.

Next, as illustrated in FIG. 8A, an insulating film 712 and aninsulating film 713 are formed so as to cover the gate insulating film703 and the gate electrode 707. Specifically, an inorganic insulatingfilm of silicon oxide, silicon nitride, silicon nitride oxide, siliconoxynitride, aluminum nitride, aluminum nitride oxide, or the like can beused as the insulating film 712 and the insulating film 713. Inparticular, the insulating film 712 and the insulating film 713 arepreferably formed using a low dielectric constant (low-k) materialbecause capacitance due to overlapping of electrodes or wirings can besufficiently reduced. Note that a porous insulating film including sucha material may be employed as the insulating film 712 and the insulatingfilm 713. Since the porous insulating film has lower dielectric constantthan a dense insulating layer, parasitic capacitance due to electrodesor wirings can be further reduced.

In this embodiment, an example in which silicon oxynitride is used forthe insulating film 712 and silicon nitride oxide is used for theinsulating film 713 is described. In addition, an example in which theinsulating film 712 and the insulating film 713 are formed over the gateelectrode 707 is described in this embodiment; however, in the presentinvention, only one insulating film may be formed over the gateelectrode 707 or a plurality of insulating films of three or more layersmay be stacked.

Next, as illustrated in FIG. 8B, the insulating film 713 is subjected tochemical mechanical polishing (CMP) or etching, so that a top surface ofthe insulating film 713 is planarized. Note that in order to improve thecharacteristics of the transistor 11 which is formed later, a surface ofthe insulating film 713 is preferably planarized as much as possible.

Through the above steps, the transistor 133 can be manufactured.

Next, a method of manufacturing the transistor 11 will be described.First, as illustrated in FIG. 8C, an oxide semiconductor layer 716 isformed over the insulating film 713.

The oxide semiconductor layer preferably contains at least indium (In)or zinc (Zn). In particular, In and Zn are preferably contained. As astabilizer for reducing variation in electric characteristics of atransistor using the oxide semiconductor, gallium (Ga) is preferablyadditionally contained. Tin (Sn) is preferably contained as astabilizer. Hafnium (Hf) is preferably contained as a stabilizer.Aluminum (Al) is preferably contained as a stabilizer.

As another stabilizer, one or plural kinds of lanthanoid such aslanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium(Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy),holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), or lutetium(Lu) may be contained.

As the oxide semiconductor, for example, an indium oxide, a tin oxide, azinc oxide, a two-component metal oxide such as an In—Zn-based oxide, aSn—Zn-based oxide, an Al—Zn-based oxide, a Zn—Mg-based oxide, aSn—Mg-based oxide, an In—Mg-based oxide, or an In—Ga-based oxide, athree-component metal oxide such as an In—Ga—Zn-based oxide (alsoreferred to as IGZO), an In—Al—Zn-based oxide, an In—Sn—Zn-based oxide,a Sn—Ga—Zn-based oxide, an Al—Ga—Zn-based oxide, a Sn—Al—Zn-based oxide,an In—Hf—Zn-based oxide, an In—La—Zn-based oxide, an In—Ce—Zn-basedoxide, an In—Pr—Zn-based oxide, an In—Nd—Zn-based oxide, anIn—Sm—Zn-based oxide, an In—Eu—Zn-based oxide, an In—Gd—Zn-based oxide,an In—Tb—Zn-based oxide, an In—Dy—Zn-based oxide, an In—Ho—Zn-basedoxide, an In—Er—Zn-based oxide, an In—Tm—Zn-based oxide, anIn—Yb—Zn-based oxide, or an In—Lu—Zn-based oxide, a four-component metaloxide such as an In—Sn—Ga—Zn-based oxide, an In—Hf—Ga—Zn-based oxide, anIn—Al—Ga—Zn-based oxide, an In—Sn—Al—Zn-based oxide, anIn—Sn—Hf—Zn-based oxide, or an In—Hf—Al—Zn-based oxide can be used. Inaddition, any of the above oxide semiconductors may contain an elementother than In, Ga, Sn, and Zn, for example, SiO₂.

Note that here, for example, an “In—Ga—Zn—O-based oxide” means an oxidecontaining In, Ga, and Zn as a main component and there is no particularlimitation on the ratio of In to Ga and Zn. The In—Ga—Zn-based oxide maycontain a metal element other than the In, Ga, and Zn. TheIn—Ga—Zn-based oxide has sufficiently high resistance when there is noelectric field; thus, off-state current can be sufficiently reduced. Inaddition, also having high field-effect mobility, the In—Ga—Zn-basedoxide is suitable for a semiconductor material used in a semiconductordevice.

Further, for example, an “In—Sn—Zn-based oxide” means an oxidecontaining In, Sn, and Zn as a main component and there is no particularlimitation on the ratio of In to Sn and Zn. The In—Sn—Zn-based oxide maycontain a metal element other than In, Sn, and Zn.

Alternatively, a material represented by a chemical formula,InMO₃(ZnO)_(m) (m>0 is satisfied, and m is not an integer) may be usedfor an oxide semiconductor layer. Here, M represents one or more metalelements selected from Ga, Fe, Mn, and Co. Alternatively, as the oxidesemiconductor, a material expressed by a chemical formula,In₃SnO₅(ZnO)_(n) (n>0, n is an integer) may be used.

For example, an In—Ga—Zn-based oxide with an atomic ratio ofIn:Ga:Zn=1:1:1 (=⅓:⅓:⅓) or In:Ga:Zn=2:2:1 (=⅖:⅖:⅕), or any of oxideswhose composition is in the neighborhood of the above compositions canbe used. Alternatively, an In—Sn—Zn-based oxide with an atomic ratio ofIn:Sn:Zn=1:1:1 (=⅓:⅓:⅓), In:Sn:Zn=2:1:3 (=⅓:⅙:½), or In:Sn:Zn=2:1:5(=¼:⅛:⅝), or any of oxides whose composition is in the neighborhood ofthe above compositions may be used.

However, without limitation to the materials given above, a materialwith an appropriate composition may be used depending on neededsemiconductor characteristics (e.g., mobility, threshold voltage, andvariation). In order to obtain required semiconductor characteristics,it is preferable that the carrier density, the impurity concentration,the defect density, the atomic ratio between a metal element and oxygen,the interatomic distance, the density, and the like be set toappropriate values.

The oxide semiconductor may be either single crystal ornon-single-crystal.

In the case where the oxide semiconductor is non-single-crystal, theoxide semiconductor may be either amorphous or polycrystalline. Further,the oxide semiconductor may have a structure including a crystallineportion in an amorphous portion. Note that the amorphous structure hasmany defects; therefore, a non-amorphous structure is preferred.

Note that the oxide semiconductor layer 716 is preferably purified(intrinsic or substantially intrinsic) by a reduction in impurities suchas moisture or hydrogen which serve as electron donors, in which casecurrent generated in a state where a channel is not formed in the oxidesemiconductor layer 716 can be reduced. Specifically, the concentrationof hydrogen in the highly purified oxide semiconductor layer 716 whichis measured by secondary ion mass spectrometry (SIMS) is 5×10¹⁹/cm³ orlower, preferably 5×10¹⁸/cm³ or lower, further preferably 5×10¹⁷/cm³ orlower, still further preferably 1×10¹⁶/cm³ or lower. The carrier densityof the oxide semiconductor layer measured by Hall effect measurement isless than 1×10¹⁴/cm³, preferably less than 1×10¹²/cm³, furtherpreferably less than 1×10¹¹/cm³.

The analysis of the hydrogen concentration in the oxide semiconductorlayer is described here. The hydrogen concentration in the semiconductorlayer is measured by secondary ion mass spectrometry. It is known thatit is difficult, in principle, to obtain correct data in the proximityof a surface of a sample or in the proximity of an interface betweenstacked layers formed using different materials by the SIMS analysis.Thus, in the case where the distribution of the concentration ofhydrogen in the layer in a thickness direction is analyzed by SIMS, anaverage value in a region of the layer in which the value is not greatlychanged and substantially the same value can be obtained is employed asthe hydrogen concentration. Further, in the case where the thickness ofthe layer is small, a region where substantially the same value can beobtained cannot be found in some cases due to the influence of theconcentration of hydrogen in the layers adjacent to each other. In thatcase, the maximum value or the minimum value of the hydrogenconcentration in the region of the layer is employed as the hydrogenconcentration of the layer. Further, in the case where a mountain-shapedpeak having the maximum value or a valley-shaped peak having the minimumvalue does not exist in the region of the layer, the value at theinflection point is employed as the hydrogen concentration.

The oxide semiconductor layer 716 can be formed by processing an oxidesemiconductor film formed over the insulating film 713 into a desiredshape. The thickness of the oxide semiconductor film is greater than orequal to 2 nm and less than or equal to 200 nm, preferably greater thanor equal to 3 nm and less than or equal to 50 nm, more preferablygreater than or equal to 3 nm and less than or equal to 20 nm. The oxidesemiconductor film is formed by a sputtering method using an oxidesemiconductor as a target. Moreover, the oxide semiconductor film can beformed by a sputtering method in a rare gas (e.g., argon) atmosphere, anoxygen atmosphere, or a mixed atmosphere of a rare gas (e.g., argon) andoxygen.

In the case where the oxide semiconductor layer 716 is formed by asputtering method, it is important to reduce not only the concentrationof hydrogen in the target but also water and hydrogen in a chamber asmuch as possible. Specifically, for example, it is effective to performbaking of the chamber before formation of the oxide semiconductor layer,to reduce the concentration of water and hydrogen in a gas introducedinto the chamber, and to prevent the counter flow in an evacuationsystem for exhausting a gas from the chamber.

Before the oxide semiconductor film is formed by a sputtering method,dust on the surface of the insulating film 713 may be removed by reversesputtering in which an argon gas is introduced and plasma is generated.The reverse sputtering is a method in which voltage is applied to asubstrate, not to a target side, under an argon atmosphere by using anRF power supply and plasma is generated in the vicinity of the substrateto modify a surface. Note that instead of an argon atmosphere, anitrogen atmosphere, a helium atmosphere, or the like may be used.Alternatively, an argon atmosphere to which oxygen, nitrous oxide, orthe like is added may be used. Alternatively, an argon atmosphere towhich chlorine, carbon tetrafluoride, or the like is added may be used.

In order that the oxide semiconductor film contains as little hydrogen,a hydroxyl group, and moisture as possible, impurities adsorbed on thesubstrate 700, such as moisture or hydrogen, may be eliminated andremoved by preheating the substrate 700, over which the insulating films712 and 713 are formed, in a preheating chamber of a sputteringapparatus as a pretreatment for film formation. The temperature for thepreheating is higher than or equal to 100° C. and lower than or equal to400° C., preferably higher than or equal to 150° C. and lower than orequal to 300° C. As an evacuation unit, a cryopump is preferablyprovided in the preheating chamber. Note that this preheating treatmentcan be omitted. This preheating may be similarly performed on thesubstrate 700 over which conductive layer 719 and the conductive layer720 are formed before the formation of a gate insulating film 721.

In this embodiment, a 30 nm thick In—Ga—Zn—O-based oxide semiconductorthin film which is obtained by sputtering using a target includingindium (In), gallium (Ga), and zinc (Zn), is used as the oxidesemiconductor film. As the target, for example, a target having acomposition ratio of In:Ga:Zn=2:2:1, In:Ga:Zn=1:1:1, or In:Ga:Zn=1:1:2can be used. The filling rate of the target including In, Ga, and Zn isgreater than or equal to 90% and less than or equal to 100%, preferablygreater than or equal to 95% and less than 100%. With the use of thetarget with high filling rate, a dense oxide semiconductor film isformed. Other than the above, a target having a composition ratio, in anIn—Ga—Zn-based oxide, of In:Ga:Zn=2:1:3, In:Ga:Zn=3:1:2, In:Ga:Zn=4:2:3,or In:Ga:Zn=3:1:4 is preferably used. By making the proportion of Inhigher than that of Ga, the field-effect mobility of an In—Ga—Zn-basedoxide can be further increased. Note that the composition ratio of metalelements is not necessarily the above integer ratios. Some deviationsfrom the above integer ratios are allowed as long as the tendency inwhich the proportion of In is higher than that of Ga can be seen.

Alternatively, the oxide semiconductor film may be formed by asputtering method using a target including In, Sn, and Zn. In that case,an oxide target which has a composition ratio of In:Sn:Zn=1:2:2, 2:1:3,1:1:1, 20:45:35, or the like in an atomic ratio is used.

In this embodiment, the oxide semiconductor film is deposited in such amanner that the substrate is held in a treatment chamber kept in areduced-pressure state, a sputtering gas from which hydrogen andmoisture are removed is introduced while moisture remaining in thetreatment chamber is removed, and the target is used. The substratetemperature may be higher than or equal to 100° C. and lower than orequal to 600° C., preferably higher than or equal to 200° C. and lowerthan or equal to 400° C. in film formation. By forming the oxidesemiconductor film in a state where the substrate is heated, theconcentration of impurities included in the formed oxide semiconductorfilm can be reduced. In addition, damage by sputtering can be reduced.In order to remove remaining moisture in the treatment chamber, anentrapment vacuum pump is preferably used. For example, a cryopump, anion pump, or a titanium sublimation pump is preferably used. Theevacuation unit may be a turbo pump provided with a cold trap. In thetreatment chamber which is evacuated with the cryopump, for example, ahydrogen atom, a compound containing a hydrogen atom, such as water(H₂O), (more preferably, also a compound containing a carbon atom), andthe like are removed, whereby the impurity concentration in the oxidesemiconductor film formed in the treatment chamber can be reduced.

As one example of the deposition condition, the distance between thesubstrate and the target is 100 mm, the pressure is 0.6 Pa, thedirect-current (DC) power source is 0.5 kW, and the atmosphere is anoxygen atmosphere (the proportion of the oxygen flow rate is 100%). Notethat a pulsed direct-current (DC) power supply is preferably used, inwhich case dust generated in deposition can be reduced and the filmthickness can be uniform.

Moreover, when the leakage rate of the treatment chamber of thesputtering apparatus is set to lower than or equal to 1×10⁻¹⁰Pa·m³/second, entry of impurities such as an alkali metal or hydrideinto the oxide semiconductor film that is being formed by a sputteringmethod can be reduced. Further, with the use of an entrapment vacuumpump as an exhaustion system, counter flow of impurities, such as alkalimetal, hydrogen atoms, hydrogen molecules, water, a hydroxyl group, orhydride, from the exhaustion system can be reduced.

When the purity of the target is set to 99.99% or higher, alkali metal,hydrogen atoms, hydrogen molecules, water, a hydroxyl group, hydride, orthe like mixed to the oxide semiconductor film can be reduced. Inaddition, when the target is used, the concentration of alkali metalsuch as lithium, sodium, or potassium can be reduced in the oxidesemiconductor film.

Note that the oxide semiconductor layer may be amorphous or may havecrystallinity. As an oxide semiconductor layer having crystallinity, acrystalline oxide semiconductor having c-axis alignment (also referredto as c-axis aligned crystalline oxide semiconductor: CAAC-OS) is alsopreferable because the effect of improving the reliability of atransistor can be obtained.

Specifically, in a broad sense, the CAAC-OS is non-single-crystal, hastriangular, hexagonal, equilateral triangular, or regular hexagonalatomic arrangement when seen from the direction perpendicular to the a-bplane, and has a phase in which metal atoms are arranged in a layeredmanner or a phase in which metal atoms and oxygen atoms are arranged ina layered manner when seen from the direction perpendicular to thec-axis direction.

In CAAC-OS, metal atoms and oxygen atoms are bonded in an orderly mannerin comparison with an amorphous oxide semiconductor. In other words, inthe case where an oxide semiconductor is amorphous, the coordinationnumbers might vary according to the kind of metal atom. In contrast, inthe case of CAAC-OS, the coordination numbers of metal atoms aresubstantially the same. Therefore, microscopic defects of oxygen can bereduced and instability and movement of charge due to attachment anddetachment of hydrogen atoms (including hydrogen ions) or alkali metalatoms can be reduced.

The CAAC-OS is not a single crystal oxide, but this does not mean thatthe CAAC-OS is composed of only an amorphous component. Although theCAAC-OS includes a crystallized portion (crystalline portion), aboundary between one crystalline portion and another crystalline portionis not clear in some cases.

In the case where oxygen is contained in the CAAC-OS, nitrogen may besubstituted for part of oxygen contained in the CAAC-OS. The c-axes ofindividual crystalline portions included in the CAAC-OS may be alignedin one direction (e.g., a direction perpendicular to a surface of asubstrate over which the CAAC-OS is formed or a surface of the CAAC-OS).Alternatively, the normals of the a-b planes of the individualcrystalline portions included in the CAAC-OS may be aligned in onedirection (e.g., a direction perpendicular to a surface of a substrateover which the CAAC-OS is formed or a surface of the CAAC-OS).

The CAAC-OS becomes a conductor, a semiconductor, or an insulatordepending on its composition or the like. The CAAC-OS transmits or doesnot transmit visible light depending on its composition or the like.

For example, when the CAAC-OS in a film shape has a triangular orhexagonal atomic arrangement when observed in the directionperpendicular to a top surface of the film or a surface of a substrateover which the CAAC-OS is formed with an electron microscope.

Further, when the cross section of the film is observed by an electronmicroscope, metal atoms are arranged in a layered manner or metal atomsand oxygen atoms (or nitrogen atoms) are arranged in a layered manner.

An example of a crystal structure of the CAAC-OS will be described withreference to FIGS. 12A to 12E, FIGS. 13A to 13C, and FIGS. 14A to 14C.

In FIGS. 12A to 12E, FIGS. 13A to 13C, and FIGS. 14A to 14C, thevertical direction corresponds to the c-axis direction and a planeperpendicular to the c-axis direction corresponds to the a-b plane. Inthis embodiment, an “upper half” and a “lower half” refer to an upperhalf above the a-b plane and a lower half below the a-b plane (an upperhalf and a lower half with respect to the a-b plane). In FIGS. 12A to12E, O surrounded by a circle represents tetracoordinate O and Osurrounded by a double circle represents tricoordinate O.

FIG. 12A illustrates a structure including one hexacoordinate In atomand six tetracoordinate oxygen (hereinafter referred to astetracoordinate O) atoms proximate to the In atom. Here, a structureincluding one metal atom and oxygen atoms proximate to the metal isreferred to as a small group.

The structure in FIG. 12A is an octahedral structure, but is illustratedas a planar structure for simplicity.

Note that in the structure in FIG. 12A, three tetracoordinate O atomsexist in each of an upper half and a lower half. In the small group ofthe structure in FIG. 12A, electric charge is 0.

FIG. 12B illustrates a structure including one pentacoordinate Ga atom,three tricoordinate oxygen (hereinafter referred to as tricoordinate O)atoms proximate to the Ga atom, and two tetracoordinate O atomsproximate to the Ga atom.

All the tricoordinate O atoms exist on the a-b plane. In the structurein FIG. 12B, one tetracoordinate O atom exists in each of an upper halfand a lower half. An In atom can also have the structure in FIG. 12Bbecause an In atom can have five ligands. In the small group of thestructure in FIG. 12B, electric charge is 0.

FIG. 12C illustrates a structure including one tetracoordinate Zn atomand four tetracoordinate O atoms proximate to the Zn atom.

In the structure in FIG. 12C, one tetracoordinate O atom exists in anupper half and three tetracoordinate O atoms exist in a lower half.Alternatively, three tetracoordinate O atoms may exist in the upper halfand one tetracoordinate O atom may exist in the lower half in FIG. 12C.In the small group of the structure in FIG. 12C, electric charge is 0.

FIG. 12D illustrates a structure including one hexacoordinate Sn atomand six tetracoordinate O atoms proximate to the Sn atom. In thestructure in FIG. 12D, three tetracoordinate O atoms exist in each of anupper half and a lower half.

In the small group of the structure in FIG. 12D, electric charge is +1.

FIG. 12E illustrates a structure including two Zn atoms.

In the structure in FIG. 12E, one tetracoordinate O atom exists in eachof an upper half and a lower half. In the small group of the structurein FIG. 12E, electric charge is −1.

In this embodiment, a plurality of small groups form a medium group, anda plurality of medium groups form a large group (also referred to as aunit cell).

Now, a rule of bonding between the small groups is described.

The three O atoms in the upper half with respect to the hexacoordinateIn atom in FIG. 12A each have three proximate In atoms in the downwarddirection, and the three O atoms in the lower half each have threeproximate In atoms in the upward direction.

The one O atom in the upper half with respect to the pentacoordinate Gaatom in FIG. 12B has one proximate Ga atom in the downward direction,and the one O atom in the lower half has one proximate Ga atom in theupward direction.

The one O atom in the upper half with respect to the tetracoordinate Znatom in FIG. 12C has one proximate Zn atom in the downward direction,and the three O atoms in the lower half each have three proximate Znatoms in the upward direction.

In this manner, the number of the tetracoordinate O atoms below themetal atom is equal to the number of the metal atoms proximate to andabove each of the tetracoordinate O atoms.

Since the coordination number of the tetracoordinate O atom is 4, thesum of the number of the metal atoms proximate to and below the O atomand the number of the metal atoms proximate to and above the O atom is4. Therefore, when the sum of the number of tetracoordinate O atomsabove a metal atom and the number of tetracoordinate O atoms belowanother metal atom is 4, the two kinds of small groups including themetal atoms can be bonded.

The reason is described below. For example, in the case where thehexacoordinate metal (In or Sn) atom is bonded through threetetracoordinate O atoms in the upper half, it is bonded totetracoordinate O atoms in the upper half of the pentacoordinate metal(Ga or In) atom, tetracoordinate O atoms in the lower half of thepentacoordinate metal (Ga or In) atom, or tetracoordinate O atoms in theupper half of the tetracoordinate metal (Zn) atom.

A metal atom whose coordination number is 4, 5, or 6 is bonded toanother metal atom through a tetracoordinate O atom in the c-axisdirection.

In addition to the above, a medium group can be formed in a differentmanner by combining a plurality of small groups so that the totalelectric charge of the layered structure is 0.

FIG. 13A illustrates a model of a medium group included in a layeredstructure of an In—Sn—Zn—O-based material. FIG. 13B illustrates a largegroup including three medium groups.

Note that FIG. 13C illustrates an atomic arrangement in the case wherethe layered structure in FIG. 13B is observed from the c-axis direction.

In the medium group in FIG. 13A, a tricoordinate O atom is omitted, onlythe number of tetracoordinate O atoms is shown. For example, threetetracoordinate O atoms existing in each of an upper half and a lowerhalf with respect to a Sn atom are denoted by circled 3.

In a similar manner, in the medium group in FIG. 13A, onetetracoordinate O atom existing in each of an upper half and a lowerhalf with respect to an In atom is denoted by circled 1.

In addition, the medium group in FIG. 13A illustrates a Zn atomproximate to one tetracoordinate O atom in a lower half and threetetracoordinate O atoms in an upper half, and a Zn atom proximate to onetetracoordinate O atom in an upper half and three tetracoordinate Oatoms in a lower half.

In the medium group in FIG. 13A included in the layered structure of theIn—Sn—Zn—O-based material, in the order starting from the top, a Sn atomproximate to three tetracoordinate O atoms in each of an upper half anda lower half is bonded to an In atom proximate to one tetracoordinate Oatom in each of an upper half and a lower half.

The In atom is bonded to a Zn atom proximate to three tetracoordinate Oatoms in an upper half.

The Zn atom is bonded to an In atom proximate to three tetracoordinate Oatoms in each of an upper half and a lower half through onetetracoordinate O atom in a lower half with respect to the Zn atom.

The In atom is bonded to a small group that includes two Zn atoms and isproximate to one tetracoordinate O atom in an upper half.

The small group is bonded to a Sn atom proximate to threetetracoordinate O atoms in each of an upper half and a lower halfthrough one tetracoordinate O atom in a lower half with respect to thesmall group.

A plurality of such medium groups are bonded, so that a large group isformed.

Here, electric charge for one bond of a tricoordinate O atom andelectric charge for one bond of a tetracoordinate O atom can be assumedto be −0.667 and −0.5, respectively.

For example, electric charge of a (hexacoordinate or pentacoordinate) Inatom, electric charge of a (tetracoordinate) Zn atom, and electriccharge of a (pentacoordinate or hexacoordinate) Sn atom are +3, +2, and+4, respectively. Therefore, electric charge in a small group includinga Sn atom is +1. Therefore, electric charge of −1, which cancels +1, isneeded to form a layered structure including a Sn atom.

As a structure having electric charge of −1, the small group includingtwo Zn atoms as illustrated in the structure in FIG. 12E can be given.

For example, with one small group including two Zn atoms, electriccharge of one small group including a Sn atom can be cancelled, so thatthe total electric charge of the layered structure can be 0.

Specifically, when the large group B is repeated, an In—Sn—Zn—O-basedcrystal (In₂SnZn₃O₈) can be obtained.

A layered structure of the obtained In—Sn—Zn—O-based crystal can beexpressed as a composition formula, In₂SnZn₂O₇(ZnO)_(m) (m is 0 or anatural number).

The same applies to the case where an oxide semiconductor other than theIn—Sn—Zn—O-based material is used.

For example, FIG. 14A illustrates a model of a medium group included ina layered structure of an In—Ga—Zn—O-based material.

In the medium group in FIG. 14A included in the layered structure of theIn—Ga—Zn—O-based material, in the order starting from the top, an Inatom proximate to three tetracoordinate O atoms in each of an upper halfand a lower half is bonded to a Zn atom proximate to one tetracoordinateO atom in an upper half.

The Zn atom is bonded to a Ga atom proximate to one tetracoordinate Oatom in each of an upper half and a lower half through threetetracoordinate O atoms in a lower half with respect to the Zn atom.

The Ga atom is bonded to an In atom proximate to three tetracoordinate Oatoms in each of an upper half and a lower half through onetetracoordinate O atom in a lower half with respect to the Ga atom.

A plurality of such medium groups are bonded, so that a large group isformed.

FIG. 14B illustrates a large group including three medium groups. Notethat FIG. 14C illustrates an atomic arrangement in the case where thelayered structure in FIG. 14B is observed from the c-axis direction.

Here, since electric charge of a (hexacoordinate or pentacoordinate) Inatom, electric charge of a (tetracoordinate) Zn atom, and electriccharge of a (pentacoordinate) Ga atom are +3, +2, +3, respectively,electric charge of a small group including any of an In atom, a Zn atom,and a Ga atom is 0.

As a result, the total electric charge of a medium group having acombination of such small groups is always 0.

In order to form the layered structure of the In—Ga—Zn—O-based material,a large group can be formed using not only the medium group in FIG. 14Abut also a medium group in which the arrangement of the In atom, the Gaatom, and the Zn atom is different from that of the medium group in FIG.14A.

Specifically, when the large group in FIG. 14B is repeated, anIn—Ga—Zn—O-based crystal can be obtained. Note that a layered structureof the obtained In—Ga—Zn—O-based crystal can be expressed as acomposition formula, InGaO₃ (ZnO)_(n) (n is a natural number).

In the case where n=1 (InGaZnO₄), a crystal structure illustrated inFIG. 15A can be obtained, for example. Note that in the crystalstructure in FIG. 15A, since a Ga atom and an In atom each have fiveligands as described in FIG. 12B, a structure in which Ga is replacedwith In can be obtained.

In the case where n=2 (InGaZn₂O₅), a crystal structure illustrated inFIG. 15B can be obtained, for example. Note that in the crystalstructure in FIG. 15B, since a Ga atom and an In atom each have fiveligands as described in FIG. 12B, a structure in which Ga is replacedwith In can be obtained.

A transistor is formed using an oxide semiconductor film including theCAAC-OS in such a manner, whereby the amount of shift of the thresholdvoltage of the transistor, which occurs after light irradiation and abias-temperature (BT) stress test are performed on the transistor, canbe reduced. Thus, a transistor having stable electric characteristicscan be manufactured.

An oxide semiconductor film including the CAAC-OS (hereinafter alsoreferred to as CAAC-OS film) can be formed by a sputtering method. Inthe case where the CAAC-OS film is formed by a sputtering method, theproportion of oxygen gas in an atmosphere is preferably high. Forsputtering in a mixed gas atmosphere of argon and oxygen, for example,the proportion of oxygen gas is preferably set to 30% or higher, morepreferably 40% or higher. This is because supply of oxygen fromatmosphere promotes the crystallization of the CAAC-OS.

In the case where a CAAC-OS film is formed by a sputtering method, asubstrate over which the CAAC-OS film is formed is heated preferably to150° C. or higher, further preferably to 170° C. or higher. This isbecause the crystallization of the CAAC-OS is promoted with an increasein the substrate temperature.

Further, after being subjected to heat treatment in a nitrogenatmosphere or in vacuum, the CAAC-OS film is preferably subjected toheat treatment in an oxygen atmosphere or a mixed atmosphere of oxygenand another gas. This is because oxygen deficiency due to the formerheat treatment can be corrected by supply of oxygen from atmosphere inthe latter heat treatment.

A film surface on which the CAAC-OS film is formed (deposition surface)is preferably flat. This is because roughness of the deposition surfacecauses generation of grain boundaries in the CAAC-OS film because thec-axis approximately perpendicular to the deposition surface exists inthe CAAC-OS film. For that reason, the deposition surface is preferablysubjected to planarization such as chemical mechanical polishing (CMP)before the CAAC-OS film is formed. The average roughness of thedeposition surface is preferably less than or equal to 1 nm, morepreferably less than or equal to 0.3 nm, further preferably less than orequal to 0.1 nm.

The oxide semiconductor film formed in the above-described manner isetched, thereby forming the oxide semiconductor layer 716. Etching forforming the oxide semiconductor layer 716 may be dry etching, wetetching, or both dry etching and wet etching. As an etching gas used fordry etching, a gas containing chlorine (a chlorine-based gas such aschlorine (Cl₂), boron trichloride (BCl₃), silicon tetrachloride (SiCl₄),or carbon tetrachloride (CCl₄)) is preferably used. Alternatively, a gascontaining fluorine (a fluorine-based gas such as carbon tetrafluoride(CF₄), sulfur hexafluoride (SF₆), nitrogen trifluoride (NF₃), ortrifluoromethane (CHF₃)), hydrogen bromide (HBr), oxygen (O₂), any ofthese gases to which a rare gas such as helium (He) or argon (Ar) isadded, or the like can be used.

As the dry etching method, a parallel plate reactive ion etching (RIE)method or an inductively coupled plasma (ICP) etching method can beused. In order to etch the film to have a desired shape, the etchingconditions (e.g., the amount of electric power applied to a coiledelectrode, the amount of electric power applied to an electrode on thesubstrate side, and the electrode temperature on the substrate side) areadjusted as appropriate.

As an etchant used for the wet etching, a mixed solution of phosphoricacid, acetic acid, and nitric acid, or organic acid such as citric acidor oxalic acid can be used. In this embodiment, ITO-07N (produced byKANTO CHEMICAL CO., INC.) is used.

A resist mask used for forming the oxide semiconductor layer 716 may beformed by an inkjet method. Formation of the resist mask by an inkjetmethod needs no photomask; thus, manufacturing cost can be reduced.

Note that it is preferable to perform reverse sputtering before theformation of a conductive film in a subsequent step to remove resistresidues and the like that attach onto surfaces of the oxidesemiconductor layer 716 and the insulating film 713.

Note that the oxide semiconductor film deposited by sputtering or thelike contains a large amount of moisture or hydrogen (including ahydroxyl group) as an impurity in some cases. Moisture or hydrogeneasily forms donor levels and thus serves as an impurity in the oxidesemiconductor. Therefore, in one embodiment of the present invention, inorder to reduce impurities such as moisture and hydrogen in the oxidesemiconductor film (dehydration or dehydrogenation), the oxidesemiconductor layer 716 is subjected to heat treatment in areduced-pressure atmosphere, an inert gas atmosphere of nitrogen, a raregas, or the like, an oxygen gas atmosphere, or an ultra dry airatmosphere (the moisture amount is 20 ppm (−55° C. by conversion into adew point) or less, preferably 1 ppm or less, further preferably 10 ppbor less, in the case where the measurement is performed by a dew pointmeter in a cavity ring down laser spectroscopy (CRDS) method).

By performing heat treatment on the oxide semiconductor layer 716,moisture or hydrogen in the oxide semiconductor layer 716 can beeliminated. Specifically, heat treatment may be performed at atemperature higher than or equal to 250° C. and lower than or equal to750° C., preferably higher than or equal to 400° C. and lower than thestrain point of a substrate. For example, heat treatment may beperformed at 500° C. for 3 to 6 minutes. When RTA is used for the heattreatment, dehydration or dehydrogenation can be performed in a shorttime; thus, treatment can be performed even at a temperature higher thanthe strain point of a glass substrate.

In this embodiment, an electrical furnace that is one of heat treatmentapparatuses is used.

Note that the heat treatment apparatus is not limited to an electricfurnace, and may have a device for heating an object by heat conductionor heat radiation from a heating element such as a resistance heatingelement. For example, an RTA (rapid thermal anneal) apparatus such as aGRTA (gas rapid thermal anneal) apparatus or an LRTA (lamp rapid thermalanneal) apparatus can be used. An LRTA apparatus is an apparatus forheating an object to be processed by radiation of light (anelectromagnetic wave) emitted from a lamp such as a halogen lamp, ametal halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressuresodium lamp, or a high pressure mercury lamp. A GRTA apparatus is anapparatus for heat treatment using a high-temperature gas. As the gas,an inert gas which does not react with an object to be processed by heattreatment, like nitrogen or a rare gas such as argon is used.

In the heat treatment, it is preferable that moisture, hydrogen, and thelike be not contained in nitrogen or a rare gas such as helium, neon, orargon. Alternatively, the purity of nitrogen or a rare gas such ashelium, neon, or argon which is introduced into the heat treatmentapparatus is preferably greater than or equal to 6 N (99.9999%), morepreferably greater than or equal to 7 N (99.99999%) (i.e., the impurityconcentration is preferably less than or equal to 1 ppm, more preferablyless than or equal to 0.1 ppm).

Note that it has been pointed out that an oxide semiconductor isinsensitive to impurities, there is no problem when a considerableamount of metal impurities is contained in the film, and therefore,soda-lime glass which contains a large amount of alkali metal such assodium (Na) and is inexpensive can be used (Kamiya, Nomura, and Hosono,“Carrier Transport Properties and Electronic Structures of AmorphousOxide Semiconductors: The present status,” KOTAI BUTSURI (SOLID STATEPHYSICS), 2009, Vol. 44, pp. 621-633). However, this is not a properconsideration. Alkali metal is not an element included in an oxidesemiconductor, and therefore, is an impurity. Also, alkaline earth metalis impurity in the case where alkaline earth metal is not included in anoxide semiconductor. Alkali metal, in particular, Na becomes Na⁺ when aninsulating film in contact with the oxide semiconductor layer is anoxide and Na diffuses into the insulating layer. Further, in the oxidesemiconductor layer, Na cuts or enters a bond between metal and oxygenwhich are included in an oxide semiconductor. As a result, for example,deterioration of characteristics of the transistor, such as anormally-on state of the transistor due to shift of a threshold voltagein the negative direction, or reduction in mobility, occurs. Inaddition, variation in characteristics also occurs. In addition,variation in characteristics also occurs. Such deterioration ofcharacteristics of the transistor and variation in characteristics dueto the impurity remarkably appear when the hydrogen concentration in theoxide semiconductor layer is very low. Specifically, a measurement valueof a Na concentration by secondary ion mass spectrometry is preferablyless than or equal to 5×10¹⁶/cm³, more preferably less than or equal to1×10¹⁶/cm³, still more preferably less than or equal to 1×10¹⁵/cm³. In asimilar manner, a measurement value of a Li concentration is preferablyless than or equal to 5×10¹⁵/cm³, more preferably less than or equal to1×10¹⁵/cm³. In a similar manner, a measurement value of a Kconcentration is preferably less than or equal to 5×10¹⁵/cm³, morepreferably less than or equal to 1×10¹⁵/cm³.

Through the above steps, the concentration of hydrogen in the oxidesemiconductor layer 716 can be reduced and the oxide semiconductor layercan be purified. Consequently, the oxide semiconductor layer can bestable. In addition, heat treatment at a temperature which is lower thanor equal to the glass transition temperature makes it possible to forman oxide semiconductor layer with extremely low carrier density and awide band gap. Therefore, the transistor can be manufactured using alarge-sized substrate, so that the productivity can be increased. Inaddition, by using the oxide semiconductor layer in which the hydrogenconcentration is reduced and the purity is improved, it is possible tomanufacture a transistor with high withstand voltage and an extremelylow off-state current. The above heat treatment can be performed at anytime as long as it is performed after the oxide semiconductor layer isformed.

Then, as illustrated in FIG. 9A, the conductive layer 719 which is incontact with the oxide semiconductor layer 716, and the conductive layer720 which is in contact with the oxide semiconductor layer 716 areformed. The conductive layer 719 and the conductive layer 720 functionas source and drain electrodes.

Specifically, the conductive layer 719 and the conductive layer 720 canbe formed in such a manner that a conductive film is formed by asputtering method or a vacuum evaporation method and then processed intoa predetermined shape.

Note that before forming a conductive film serving as the conductivelayer 719 and the conductive layer 720, an opening is formed in the gateinsulating film 703, the insulating film 712, and the insulating film713 is formed to expose part of the semiconductor layer 704 and aconductive film can be formed so as to be connected to the semiconductorlayer 704. By processing the conductive film into a predetermined shape,the conductive layer 719 and the conductive layer 720 can serve as asource electrode and a drain electrode which are connected to the pairof impurity regions 709 in the semiconductor layer 704. Alternatively, asource electrode and a drain electrode of the transistor 133 may beformed of a conductive film different from the conductive layer 719 andthe conductive layer 720 to be connected to the conductive layer 719 andthe conductive layer 720.

As the conductive film which serves as the conductive layer 719 and theconductive layer 720, any of the following materials can be used: anelement selected from aluminum, chromium, copper, tantalum, titanium,molybdenum, or tungsten; an alloy including any of these elements; analloy film including the above elements in combination; and the like.Alternatively, a structure may be employed in which a film of arefractory metal such as chromium, tantalum, titanium, molybdenum, ortungsten is stacked over or below a metal film of aluminum or copper.Aluminum or copper is preferably used in combination with a refractorymetal material in order to avoid problems with heat resistance andcorrosion. As the refractory metal material, molybdenum, titanium,chromium, tantalum, tungsten, neodymium, scandium, yttrium, or the likecan be used.

Further, the conductive film which serves as the conductive layer 719and the conductive layer 720 may have a single-layer structure or alayered structure of two or more layers. For example, a single-layerstructure of an aluminum film containing silicon, a two-layer structurein which a titanium film is stacked over an aluminum film, a three-layerstructure in which a titanium film, an aluminum film, and a titaniumfilm are stacked in that order, and the like can be given. A Cu—Mg—Alalloy, a Mo—Ti alloy, Ti, and Mo have high adhesiveness with an oxidefilm. Thus, for the conductive layer 719 and the conductive layer 720, alayered structure is employed in which a conductive film including aCu—Mg—Al alloy, a Mo—Ti alloy, Ti, or Mo is used for a lower layer and aconductive film including Cu is used for an upper layer. Consequently,the adhesion between an insulating film which is an oxide film and theconductive layer 719 and the conductive layer 720 can be increased.

For the conductive film which serves as the conductive layer 719 and theconductive layer 720, a conductive metal oxide may be used. As theconductive metal oxide, indium oxide, tin oxide, zinc oxide, indium tinoxide, indium zinc oxide, or the metal oxide material to which siliconor silicon oxide is added can be used.

In the case where heat treatment is performed after formation of theconductive film, the conductive film preferably has heat resistanceenough to withstand the heat treatment.

Note that the material and etching conditions are adjusted asappropriate so that the oxide semiconductor layer 716 is not removed inetching of the conductive film as much as possible. Depending on theetching conditions, there are some cases in which an exposed portion ofthe oxide semiconductor layer 716 is partially etched and thus a groove(a depression portion) is formed.

In this embodiment, a titanium film is used for the conductive film.Therefore, wet etching can be selectively performed on the conductivefilm using a solution (an ammonia hydrogen peroxide mixture) containingammonia and hydrogen peroxide water. As the ammonia hydrogen peroxidemixture, specifically, a solution in which hydrogen peroxide water of 31wt %, ammonia water of 28 wt %, and water are mixed at a volume ratio of5:2:2 is used. Alternatively, dry etching may be performed on theconductive film with the use of a gas containing chlorine (Cl₂), boronchloride (BCl₃), or the like.

In order to reduce the number of photomasks and steps in aphotolithography step, etching may be performed with the use of a resistmask formed using a multi-tone mask which is a light-exposure maskthrough which light is transmitted so as to have a plurality ofintensities. A resist mask formed using a multi-tone mask has aplurality of thicknesses and can be changed in shape by etching; thus,the resist mask can be used in a plurality of etching processes forprocessing films into different patterns. Therefore, a resist maskcorresponding to at least two kinds or more of different patterns can beformed by one multi-tone mask. Thus, the number of light-exposure maskscan be reduced and the number of corresponding photolithography stepscan be also reduced, whereby simplification of a process can berealized.

Further, an oxide conductive film functioning as source and drainregions may be provided between the oxide semiconductor layer 716, andthe conductive layer 719 and the conductive layer 720 functioning assource and drain electrodes. The material of the oxide conductive filmpreferably contains zinc oxide as a component and preferably does notcontain indium oxide. For such an oxide conductive film, zinc oxide,zinc aluminum oxide, zinc aluminum oxynitride, gallium zinc oxide, orthe like can be used.

For example, in the case where the oxide conductive film is formed,etching for forming the oxide conductive film and etching for formingthe conductive layer 719 and the conductive layer 720 may be performedconcurrently.

With provision of the oxide conductive film functioning as source anddrain regions, resistance between the oxide semiconductor layer 716, andthe conductive layer 719 and the conductive layer 720 can be lowered, sothat the transistor can operate at high speed. In addition, withprovision of the oxide conductive film functioning as a source regionand a drain region, the withstand voltage of the transistor can beincreased.

Next, plasma treatment may be performed using a gas such as N₂O, N₂, orAr. By this plasma treatment, water or the like adhering to an exposedsurface of the oxide semiconductor layer is removed. Plasma treatmentmay be performed using a mixture gas of oxygen and argon as well.

After the plasma treatment, as illustrated in FIG. 9B, the gateinsulating film 721 is formed so as to cover the conductive layer 719,the conductive layer 720, and the oxide semiconductor layer 716. Then, agate electrode 722 is formed over the gate insulating film 721 tooverlap with the oxide semiconductor layer 716.

Then, a pair of high-concentration regions 908 is formed by adding adopant imparting n-type conductivity to the oxide semiconductor layer716, using the gate electrode 722 as a mask, after the gate electrode722 is formed. Note that a region of the oxide semiconductor layer 716,which overlaps with the gate electrode 722 with the gate insulating film721 provided therebetween, is a channel formation region. The oxidesemiconductor layer 716 includes the channel formation region betweenthe pair of high-concentration regions 908. The dopant for forming thehigh-concentration regions 908 can be added by an ion implantationmethod. A rare gas such as helium, argon, and xenon; an atom belongingto Group 15, such as nitrogen, phosphorus, arsenic, and antimony; or thelike can be used as the dopant. For example, when nitrogen is used asthe dopant, it is preferable that the high concentration regions 908have a nitrogen atom concentration higher than or equal to 5×10¹⁹/cm³and lower than or equal to 1×10²²/cm³. The high-concentration region 908to which the dopant imparting n-type conductivity is added has higherconductivity than other regions in the oxide semiconductor layer 716.Therefore, by providing the high-concentration regions 908 in the oxidesemiconductor layer 716, the resistance between the source electrode andthe drain electrode (the conductive layer 719 and the conductive layer720) can be lowered.

When the resistance between the source and drain electrodes (theconductive layer 719 and the conductive layer 720) is lowered, highon-state current and high-speed operation can be secured even when thetransistor 11 is miniaturized. In addition, by the miniaturization ofthe transistor 11, the semiconductor device 300 can be downsized.

In the case where an In—Ga—Zn—O-based oxide semiconductor is used forthe oxide semiconductor layer 716, heat treatment is performed at atemperature higher than or equal to 300° C. and lower than or equal to600° C. for 1 hour after nitrogen is added. Consequently, the oxidesemiconductor in the high-concentration regions 908 has a wurtzitecrystal structure. Since the oxide semiconductor in thehigh-concentration regions 908 has a wurtzite crystal structure, theconductivity of the high-concentration regions 908 can be furtherincreased and the resistance between the source and drain electrodes(the conductive layer 719 and the conductive layer 720) can bedecreased. Note that in order to effectively lower the resistancebetween the source and drain electrodes (the conductive layer 719 andthe conductive layer 720) by forming an oxide semiconductor with awurtzite crystal structure, the concentration of nitrogen atoms in thehigh-concentration region 908 is preferably higher than or equal to1×10²⁰/cm³ and lower than or equal to 7 at. % in the case where nitrogenis used as the dopant. However, even when the nitrogen atomconcentration is lower than the above range, the oxide semiconductorhaving a wurtzite crystal structure can be obtained in some cases.

The gate insulating film 721 can be formed using a material and alayered structure which are similar to those of the gate insulating film703.

Note that the gate insulating film 721 preferably includes impuritiessuch as moisture or hydrogen as little as possible, and the gateinsulating film 721 may be formed using a single-layer insulating filmor a plurality of insulating films stacked. When hydrogen is containedin the gate insulating film 721, hydrogen enters the oxide semiconductorlayer 716 or oxygen in the oxide semiconductor layer 716 is extracted byhydrogen, whereby the oxide semiconductor layer 716 has lower resistance(n-type conductivity); thus, a parasitic channel might be formed.

Thus, it is important that a deposition method in which hydrogen is notused be employed in order to form the gate insulating film 721containing hydrogen as little as possible.

A material having a high barrier property is preferably used for thegate insulating film 721. As the insulating film having a high barrierproperty, a silicon nitride film, a silicon nitride oxide film, analuminum nitride film, an aluminum nitride oxide film, or the like canbe used, for example. When a plurality of insulating films stacked areused, an insulating film having a lower proportion of nitrogen such as asilicon oxide film or a silicon oxynitride film is formed on the sidecloser to the oxide semiconductor layer 716 than the insulating filmhaving a high barrier property. Then, the insulating film having a highbarrier property is formed to overlap with the conductive layer 719 andthe conductive layer 720, and the oxide semiconductor layer 716 with theinsulating film having low proportion of nitrogen provided therebetween.When the insulating film having a high barrier property is used,impurities such as moisture and hydrogen can be prevented from enteringthe oxide semiconductor layer 716, the gate insulating film 721, or theinterface between the oxide semiconductor layer 716 and anotherinsulating film and the vicinity thereof.

In addition, the insulating film having a lower proportion of nitrogensuch as a silicon oxide film or a silicon oxynitride film formed incontact with the oxide semiconductor layer 716 can prevent theinsulating film formed using a material having a high barrier propertyfrom being in direct contact with the oxide semiconductor layer 716.

In this embodiment, the gate insulating film 721 has a structure inwhich a 100-nm-thick silicon nitride film formed by sputtering isstacked over a 200-nm-thick silicon oxide film formed by sputtering. Thesubstrate temperature in film formation may be higher than or equal toroom temperature and lower than or equal to 300° C. and in thisembodiment, is 100° C.

After the gate insulating film 721 is formed, heat treatment may beperformed. The heat treatment is performed in a nitrogen atmosphere,ultra-dry air, or a rare gas (e.g., argon or helium) atmospherepreferably at 200 to 400° C., for example, 250 to 350° C. It ispreferable that the water content in the gas be 20 ppm or less, morepreferably 1 ppm or less, further preferably 10 ppb or less.

In this embodiment, for example, heat treatment is performed at 250° C.in a nitrogen atmosphere for 1 hour. Alternatively, RTA treatment for ashort time at a high temperature may be performed before the conductivelayer 719 and the conductive layer 720 are formed in a manner similar tothat of the heat treatment performed on the oxide semiconductor layerfor reduction of moisture or hydrogen. Even when oxygen deficiency isgenerated in the oxide semiconductor layer 716 by the previous heattreatment performed on the oxide semiconductor layer 716 by performingheat treatment after providing the gate insulating film 721 containingoxygen, oxygen is supplied to the oxide semiconductor layer 716 from thegate insulating film 721. By supplying oxygen to the oxide semiconductorlayer 716, oxygen deficiency that serves as a donor can be reduced inthe oxide semiconductor layer 716 and the stoichiometric ratio can besatisfied. It is preferable that the proportion of oxygen in the oxidesemiconductor layer 716 be higher than that in the stoichiometriccomposition. As a result, the oxide semiconductor layer 716 can be madeto be substantially i-type and variation in electrical characteristicsof the transistor due to oxygen deficiency can be reduced; thus,electrical characteristics can be improved. The timing of this heattreatment is not particularly limited as long as it is after theformation of the gate insulating film 721. When this heat treatmentdoubles as another step such as heat treatment for formation of a resinfilm or heat treatment for reduction of the resistance of a transparentconductive film, the oxide semiconductor layer 716 can be made to besubstantially i-type without the number of steps increased.

Moreover, the oxygen deficiency that serves as a donor in the oxidesemiconductor layer 716 may be reduced by subjecting the oxidesemiconductor layer 716 to heat treatment in an oxygen atmosphere sothat oxygen is added to the oxide semiconductor. The heat treatment isperformed at a temperature of, for example, higher than or equal to 100°C. and lower than 350° C., preferably higher than or equal to 150° C.and lower than 250° C. It is preferable that an oxygen gas used for theheat treatment under an oxygen atmosphere do not contain water,hydrogen, or the like. Alternatively, the purity of the oxygen gas whichis introduced into the heat treatment apparatus is preferably greaterthan or equal to 6N (99.9999%), more preferably greater than or equal to7N (99.99999%) (that is, the impurity concentration in the oxygen gas isless than or equal to 1 ppm, preferably less than or equal to 0.1 ppm).

Alternatively, oxygen may be added to the oxide semiconductor layer 716by an ion implantation method, an ion doping method, or the like toreduce oxygen deficiency serving as a donor. For example, oxygen whichis made into a plasma state with a microwave at 2.45 GHz may be added tothe oxide semiconductor layer 716.

The gate electrode 722 can be formed in a manner such that a conductivefilm is formed over the gate insulating film 721 and then is etched. Thegate electrode 722 can be formed using a material similar to that of thegate electrode 707 and the conductive layer 719 and the conductive layer720.

The thickness of the gate electrode 722 is greater than or equal to 10nm and less than or equal to 400 nm, preferably greater than or equal to100 nm and less than or equal to 200 nm. In this embodiment, after a150-nm-thick conductive film for the gate electrode is formed bysputtering using a tungsten target, the conductive film is etched into adesired shape, so that the gate electrode 722 is formed. Note that aresist mask may be formed by an inkjet method. Formation of the resistmask by an inkjet method needs no photomask; thus, manufacturing costcan be reduced.

Through the above steps, the transistor 11 is manufactured.

In the transistor 11, the source electrode and drain electrodes (theconductive layer 719 and the conductive layer 720) do not overlap withthe gate electrode 722. In other words, a gap which is larger than thethickness of the gate insulating film 721 is provided between the sourceand drain electrodes (the conductive layer 719 and the conductive layer720) and the gate electrode 722. Thus, in the transistor 11, parasiticcapacitance formed between the source and drain electrodes and the gateelectrode can be reduced. Consequently, high-speed operation can beperformed.

Note that the transistor 11 is not limited to a transistor whose channelis formed in an oxide semiconductor layer, and it is possible to use atransistor that includes a semiconductor material whose band gap iswider than that of silicon and whose intrinsic carrier density is lowerthan that of silicon in a channel formation region. As such asemiconductor material, for example, silicon carbide, gallium nitride,or the like can be used instead of an oxide semiconductor. With achannel formation region including such a semiconductor material, atransistor whose off-state current is extremely low can be obtained.

Although the transistor 11 is a single-gate transistor, a multi-gatetransistor including a plurality of channel formation regions can beformed when a plurality of gate electrodes electrically connected toeach other are included when needed.

Note that an insulating film in contact with the oxide semiconductorlayer 716 (which corresponds to the gate insulating film 721 in thisembodiment) may be formed using an insulating material containing aGroup 13 element and oxygen. Many of oxide semiconductor materialscontain elements of Group 13, and an insulating material containing anelement of Group 13 is compatible with an oxide semiconductor. Thus,when an insulating material containing an element of Group 13 is usedfor the insulating film in contact with the oxide semiconductor layer,the state of the interface between the oxide semiconductor layer and theinsulating film can be kept favorable.

An insulating material containing an element that belongs to Group 13 isan insulating material containing one or more elements that belong toGroup 13. As the insulating material containing a Group 13 element, agallium oxide, an aluminum oxide, an aluminum gallium oxide, a galliumaluminum oxide, and the like are given. Here, aluminum gallium oxiderefers to a material in which the amount of aluminum is larger than thatof gallium in atomic percent, and gallium aluminum oxide refers to amaterial in which the amount of gallium is larger than or equal to thatof aluminum in atomic percent.

For example, when a material containing gallium oxide is used for aninsulating film that is in contact with an oxide semiconductor layercontaining gallium, characteristics at the interface between the oxidesemiconductor layer and the insulating film can be kept favorable. Forexample, the oxide semiconductor layer and an insulating film containinggallium oxide are provided in contact with each other, so that pile upof hydrogen at the interface between the oxide semiconductor layer andthe insulating film can be reduced. Note that a similar effect can beobtained in the case where an element in the same group as a constituentelement of the oxide semiconductor is used in an insulating film. Forexample, it is effective to form an insulating film with the use of amaterial including aluminum oxide. Note that water is less likely topermeate an aluminum oxide. Thus, it is preferable to use a materialcontaining an aluminum oxide in terms of preventing entry of water tothe oxide semiconductor layer.

The insulating material of the insulating film in contact with the oxidesemiconductor layer 716 is preferably made to contain oxygen in aproportion higher than that in the stoichiometric composition by heattreatment in an oxygen atmosphere or by oxygen doping. “Oxygen doping”refers to addition of oxygen into a bulk. Note that the term “bulk” isused in order to clarify that oxygen is added not only to a surface of athin film but also to the inside of the thin film. In addition, “oxygendoping” includes “oxygen plasma doping” in which oxygen which is made tobe plasma is added to a bulk. The oxygen doping may be performed by ionimplantation or ion doping.

For example, in the case where the insulating film in contact with theoxide semiconductor layer 716 is formed using gallium oxide, thecomposition of gallium oxide can be set to be Ga₂O_(x) (x=3+α, 0<α<1) byheat treatment in an oxygen atmosphere or by oxygen doping.

In the case where the insulating film in contact with the oxidesemiconductor layer 716 is formed using aluminum oxide, the compositionof aluminum oxide can be set to be Al₂O_(x) (x=3+α, 0<α<1) by heattreatment in an oxygen atmosphere or by oxygen doping.

In the case where the insulating film in contact with the oxidesemiconductor layer 716 is formed using gallium aluminum oxide (aluminumgallium oxide), the composition of gallium aluminum oxide (aluminumgallium oxide) can be set to be Ga_(x)Al_(2-x)O_(3+α) (0<x<2, 0<α<1) byheat treatment in an oxygen atmosphere or by oxygen doping.

By oxygen doping, an insulating film which includes a region where theproportion of oxygen is higher than that in the stoichiometriccomposition can be formed. When the insulating film including such aregion is in contact with the oxide semiconductor layer, excess oxygenin the insulating film is supplied to the oxide semiconductor layer, andoxygen defects in the oxide semiconductor layer or at the interfacebetween the oxide semiconductor layer and the insulating film arereduced. Thus, the oxide semiconductor layer can be made to be an i-typeor substantially i-type oxide semiconductor.

Note that the insulating film which includes a region where theproportion of oxygen is higher than that in the stoichiometriccomposition may be applied to either the insulating film located on theupper side of the oxide semiconductor layer 716 or the insulating filmlocated on the lower side of the oxide semiconductor layer 716 of theinsulating films in contact with the oxide semiconductor layer 716;however, it is preferable to apply such an insulating film to both ofthe insulating films in contact with the oxide semiconductor layer 716.The above-described effect can be enhanced with a structure where theoxide semiconductor layer 716 is sandwiched between the insulating filmseach including a region where the proportion of oxygen is higher thanthat in the stoichiometric composition, which are used as the insulatingfilms in contact with the oxide semiconductor layer 716 and located onthe upper side and the lower side of the oxide semiconductor layer 716.

The insulating films on the upper side and the lower side of the oxidesemiconductor layer 716 may contain the same constituent elements ordifferent constituent elements. For example, the insulating films on theupper side and the lower side may be both formed of gallium oxide whosecomposition is Ga₂O_(x) (x=3+α, 0<α<1). Alternatively, one of theinsulating films on the upper side and the lower side may be formed ofGa₂O_(x) (x=3+α, 0<α<1) and the other may be formed of aluminum oxidewhose composition is Al₂O_(x) (x=3+α, 0<α<1).

The insulating film in contact with the oxide semiconductor layer 716may be formed by stacking insulating films each including a region wherethe proportion of oxygen is higher than that in the stoichiometriccomposition. For example, the insulating film on the upper side of theoxide semiconductor layer 716 may be formed as follows: gallium oxidewhose composition is Ga₂O_(x) (x=3+a, 0<a<1) is formed and galliumaluminum oxide (aluminum gallium oxide) whose composition isGa_(x)Al_(2-x)O_(3+a) (0<x<2, 0<a<1) is formed thereover. Note that theinsulating film on the lower side of the oxide semiconductor layer 716may be formed by stacking insulating films each including a region wherethe proportion of oxygen is higher than that in the stoichiometriccomposition.

Next, as illustrated in FIG. 9C, an insulating film 724 is formed so asto cover the gate insulating film 721 and the gate electrode 722. Theinsulating film 724 can be formed by a PVD method, a CVD method, or thelike. The insulating film 724 can be formed using a material includingan inorganic insulating material such as silicon oxide, siliconoxynitride, silicon nitride, hafnium oxide, gallium oxide, or aluminumoxide. Note that for the insulating film 724, a material with a lowdielectric constant or a structure with a low dielectric constant (e.g.,a porous structure) is preferably used. When the dielectric constant ofthe insulating film 724 is lowered, parasitic capacitance generatedbetween wirings or electrodes can be reduced, which results in higherspeed operation. Note that although the insulating film 724 has asingle-layer structure in this embodiment, one embodiment of the presentinvention is not limited to this structure. The insulating film 724 mayhave a layered structure of two or more layers.

Next, an opening is formed in the gate insulating film 721 and theinsulating film 724, so that part of the conductive layer 720 isexposed. After that, a wiring 726 which is in contact with theconductive layer 720 through the opening is formed over the insulatingfilm 724.

The wiring 726 is formed in such a manner that a conductive film isformed by a PVD method or a CVD method and then the conductive film isprocessed by etching. As the material of the conductive film, an elementselected from aluminum, chromium, copper, tantalum, titanium,molybdenum, or tungsten; an alloy containing any of these elements as acomponent; or the like can be used. A material including one ofmanganese, magnesium, zirconium, beryllium, neodymium, and scandium or acombination of any of these elements may be used.

Specifically, for example, it is possible to employ a method in which athin titanium film is formed in a region including the opening of theinsulating film 724 by a PVD method and a thin titanium film (with athickness of approximately 5 nm) is formed by a PVD method, and then analuminum film is formed so as to be embedded in the opening. Here, thetitanium film formed by a PVD method has a function of reducing an oxidefilm (e.g., a native oxide film) formed on a surface over which thetitanium film is formed, to decrease the contact resistance with thelower electrode or the like (here, the conductive layer 720). Inaddition, hillock of aluminum film can be prevented. A copper film maybe formed by a plating method after the formation of the barrier film oftitanium, titanium nitride, or the like.

Next, as illustrated in FIG. 9D, an insulating film 727 is formed so asto cover the wiring 726. Further, a conductive film is formed over theinsulating film 727 and then is etched, so that a conductive layer 7301is formed. After that, an insulating film 7302 is formed so as to coverthe conductive layer 7301, and a conductive film 7303 is formed over theinsulating film 7302. In this manner, the capacitor 12 can be formed.One of a pair of electrodes of the capacitor 12 corresponds to theconductive layer 7301; the other of the pair of electrodes, theconductive film 7303; and a dielectric layer, the insulating film 7302.Here, the insulating film 727, the conductive layer 7301, the insulatingfilm 7302, and the conductive film 7303 can be formed using materialssimilar to those of other insulating films and conductive layers. Notethat the one of the pair of electrodes of the capacitor 12 can beelectrically connected to the source, the drain, or the gate of thetransistor 11.

Through the series of steps, the semiconductor device can bemanufactured.

Through the above steps, in the semiconductor device, the transistor 11including an oxide semiconductor can be provided over the transistor 133including a material other than an oxide semiconductor. This makes itpossible to downsize the semiconductor device. In the case where acapacitor 12 is provided, the capacitor is further provided over thetransistor 133, which makes it possible to downsize the semiconductordevice.

When an oxide semiconductor is used for a semiconductor layer in atransistor whose source or drain is connected to a capacitor (thetransistor 310 in FIG. 3A and the transistors 310 and 410 in FIG. 4A),leakage of charge held in the capacitor can be prevented. Thus, evenwhen the area of the capacitor 12 is small, the capacitor 12 can keepholding sufficient charge, and the semiconductor device can be downsizedsynergistically.

This embodiment can be implemented in combination with any of the otherembodiments as appropriate.

Embodiment 7

In this embodiment, the transistor 11 including an oxide semiconductorlayer with a structure different from the structure in Embodiment 6 willbe described. Note that the same portions as those in FIGS. 9A to 9D aredenoted by the same reference numerals, and description thereof isomitted.

A transistor 11 illustrated in FIG. 10A is a top-gate transistor inwhich the gate electrode 722 is formed over the oxide semiconductorlayer 716 and is also a bottom-contact transistor in which the sourceand drain electrodes (the conductive layer 719 and the conductive layer720) are formed below the oxide semiconductor layer 716.

The oxide semiconductor layer 716 includes a pair of high-concentrationregions 918 that can be obtained by adding a dopant imparting n-typeconductivity to the oxide semiconductor layer 716 after the gateelectrode 722 is formed. In addition, a region of the oxidesemiconductor layer 716, which overlaps with the gate electrode 722 withthe gate insulating film 721 interposed therebetween, is a channelformation region 919. The oxide semiconductor layer 716 includes thechannel formation region 919 between the pair of high-concentrationregions 918.

The high-concentration regions 918 can be formed in a manner similar tothat of the high-concentration regions 908 in Embodiment 6.

A transistor 11 illustrated in FIG. 10B is a top-gate transistor inwhich the gate electrode 722 is formed over the oxide semiconductorlayer 716 and is also a bottom-contact transistor in which the sourceand drain electrodes (the conductive layer 719 and the conductive layer720) are formed over the oxide semiconductor layer 716. The transistor11 further includes sidewalls 930 that are provided at ends of the gateelectrode 722 and are formed using an insulating film.

The oxide semiconductor layer 716 includes a pair of high-concentrationregions 928 and a pair of low-concentration regions 929 that can beobtained by adding a dopant imparting n-type conductivity to the oxidesemiconductor layer 716 after the gate electrode 722 is formed. Inaddition, a region of the oxide semiconductor layer 716, which overlapswith the gate electrode 722 with the gate insulating film 721 interposedtherebetween, is a channel formation region 931. The oxide semiconductorlayer 716 includes the pair of low-concentration regions 929 between thepair of high-concentration regions 928 and the channel formation region931 between the pair of low-concentration regions 929. Further, the pairof low-concentration regions 929 is provided in a region of the oxidesemiconductor layer 716, which overlaps with the sidewalls 930 with thegate insulating film 721 interposed therebetween.

The high-concentration regions 928 and the low-concentration regions 929can be formed in a manner similar to that of the high-concentrationregions 908 in Embodiment 6.

The transistor 11 illustrated in FIG. 10C is a top-gate transistor inwhich the gate electrode 722 is formed over the oxide semiconductorlayer 716 and is also a bottom-contact transistor in which the sourceand drain electrodes (the conductive layer 719 and the conductive layer720) are formed below the oxide semiconductor layer 716. The transistor11 further includes sidewalls 950 that are provided at ends of the gateelectrode 722 and are formed using an insulating film.

The oxide semiconductor layer 716 includes a pair of high-concentrationregions 948 and a pair of low-concentration regions 949 that can beobtained by adding a dopant imparting n-type conductivity to the oxidesemiconductor layer 716 after the gate electrode 722 is formed. Inaddition, a region of the oxide semiconductor layer 716, which overlapswith the gate electrode 722 with the gate insulating film 721 interposedtherebetween, is a channel formation region 951. The oxide semiconductorlayer 716 includes the pair of low-concentration regions 949 between thepair of high-concentration regions 948 and the channel formation region951 between the pair of low-concentration regions 949. Further, the pairof low-concentration regions 949 is provided in a region of the oxidesemiconductor layer 716, which overlaps with the sidewalls 950 with thegate insulating film 721 interposed therebetween.

The high-concentration regions 948 and the low-concentration regions 949can be formed in a manner similar to that of the high-concentrationregions 908 in Embodiment 6.

Note that as a method for forming high-concentration regions functioningas a source region and a drain region in a self-aligning process in atransistor including an oxide semiconductor, disclosed is a method inwhich a surface of an oxide semiconductor layer is exposed and argonplasma treatment is performed so that the resistivity of a region whichis exposed to plasma in the oxide semiconductor layer is decreased (S.Jeon et al., “180 nm Gate Length Amorphous InGaZnO Thin Film Transistorfor High Density Image Sensor Applications,” IEDM Tech. Dig., pp.504-507, 2010).

However, in the manufacturing method, a gate insulating film needs to bepartly removed after formation of the gate insulating film so thatportions which are to serve as the source region and the drain regionare exposed. Therefore, at the time of removing the gate insulatingfilm, the oxide semiconductor layer which is below the gate insulatingfilm is partially over-etched; thus, the thickness of the portion whichis to be the source region and the drain region becomes small. As aresult, the resistance of the source region and the drain region isincreased, and defects of transistor characteristics due to overetchingeasily occur.

For further miniaturization of a transistor, it is suitable to adopt adry-etching method with high process accuracy. However, the overetchingeasily occurs remarkably in the case where a dry etching method withwhich the selectivity of a gate insulating film to an oxidesemiconductor layer is not sufficiently obtained is employed.

For example, the problem of overetching does not arise when the oxidesemiconductor layer has a sufficient thickness. However, when thechannel length is to be shorter than or equal to 200 nm, the thicknessof the portion of the oxide semiconductor layer to be a channelformation region needs to be less than or equal to 20 nm, preferablyless than or equal to 10 nm so as to prevent short-channel effect. Whenan oxide semiconductor layer has such a small thickness, overetching ofthe oxide semiconductor layer is unfavorable because the resistance of asource region and a drain region is increased and defects of transistorcharacteristics are caused as described above.

However, as in one embodiment of the present invention, addition ofdopant to an oxide semiconductor layer is performed in the state where agate insulating film is left so as not to expose the oxidesemiconductor; thus, the overetching of the oxide semiconductor layercan be prevented and excessive damage to the oxide semiconductor layercan be reduced. In addition, the interface between the oxidesemiconductor layer and the gate insulating film is kept clean.Therefore, the characteristics and reliability of the transistor can beimproved.

This embodiment can be implemented in combination with any of the otherembodiments as appropriate.

Embodiment 8

In this embodiment, a transistor including an oxide semiconductor layerwith a structure different from the structure in Embodiment 6 orEmbodiment 7 will be described. Note that the same portions as those inFIGS. 9A to 9D are denoted by the same reference numerals, anddescription thereof is omitted. In the transistor 11 in this embodiment,the gate electrode 722 is provided to overlap with the conductive layers719 and 720. Further, the transistor 11 in this embodiment differs fromthe transistor 11 in Embodiment 6 or Embodiment 7 in that the oxidesemiconductor layer 716 is not subjected to addition of an impurityelement imparting conductivity with the use of the gate electrode 722 asa mask.

The transistor 11 in FIG. 11A includes the oxide semiconductor layer 716below the conductive layer 719 and the conductive layer 720. Thetransistor 11 in FIG. 11B includes the oxide semiconductor layer 716above the conductive layer 719 and the conductive layer 720. Note thatalthough the upper surface of the insulating film 724 is not planarizedin each of FIGS. 11A and 11B, the present invention is not limited tothis structure. The upper surface of the insulating film 724 may beplanarized.

This embodiment can be implemented in combination with any of the otherembodiments as appropriate.

Embodiment 9

In this embodiment, a structure of a CPU, one of semiconductor devicesaccording to one embodiment of the present invention, will be described.

FIG. 16 illustrates the structure of the CPU of this embodiment. The CPUillustrated in FIG. 16 mainly includes, over a substrate 9900, anarithmetic logic unit (ALU) 9901, an ALU controller 9902, an instructiondecoder 9903, an interrupt controller 9904, a timing controller 9905, aregister 9906, a register controller 9907, a bus interface (Bus I/F)9908, a rewritable ROM 9909, and a ROM interface (ROM I/F) 9920.Further, the ROM 9909 and the ROM I/F 9920 may be provided overdifferent chips. Needless to say, the CPU illustrated in FIG. 16 is justan example in which the structure is simplified, and an actual CPU mayhave various structures depending on the application.

An instruction which is input to the CPU through the Bus I/F 9908 isinput to the instruction decoder 9903 and decoded therein, and then,input to the ALU controller 9902, the interrupt controller 9904, theregister controller 9907, and the timing controller 9905.

The ALU controller 9902, the interrupt controller 9904, the registercontroller 9907, and the timing controller 9905 perform various controlsin accordance with the decoded instruction. Specifically, the ALUcontroller 9902 generates signals for controlling the drive of the ALU9901. While the CPU is executing a program, the interrupt controller9904 processes an interrupt request from an external input/output deviceor a peripheral circuit based on its priority or a mask state. Theregister controller 9907 generates an address of the register 9906, andreads/writes data from/to the register 9906 depending on the state ofthe CPU.

The timing controller 9905 generates signals for controlling operationtimings of the ALU 9901, the ALU controller 9902, the instructiondecoder 9903, the interrupt controller 9904, and the register controller9907. For example, the timing controller 9905 is provided with aninternal clock generator for generating an internal clock signal CLK2 onthe basis of a reference clock signal CLK1, and supplies the clocksignal CLK2 to the above circuits.

In the CPU of this embodiment, any of the semiconductor devices havingthe structures described in the above embodiments is provided in aninput portion, an output portion, or an input/output portion in at leastone of the ALU 9901, the ALU controller 9902, the instruction decoder9903, the interrupt controller 9904, the timing controller 9905, theregister 9906, the register controller 9907, the Bus I/F 9908, therewritable ROM 9909, and the ROM I/F 9920. For example, in the casewhere any of the semiconductor devices having the structures describedin the above embodiments is provided in the register 9906, the registercontroller 9907 can keep the semiconductor device included in theregister 9906 in a high impedance state in which leakage current issuppressed, in response to an instruction from the ALU 9901. As aresult, power consumption can be reduced.

In such a manner, the operation of the CPU is stopped temporarily andsupply of power supply voltage is stopped by a transistor including anoxide semiconductor, so that leakage current can be prevented, whichresults in a reduction in power consumption.

Although the CPU is given as an example in this embodiment, thesemiconductor device according to one embodiment of the disclosedinvention can be applied to an LSI such as a microprocessor, an imageprocessing circuit, a digital signal processor (DSP), or a fieldprogrammable gate array (FPGA) without limitation to the CPU.

Further, by using a transistor including an oxide semiconductor, whichis included in the semiconductor device according to one embodiment ofthe disclosed invention, a nonvolatile random access memory can beachieved.

A magnetic tunnel junction element (MTJ element) is known as anonvolatile random access memory. The MTJ element stores data in a lowresistance state when the spin directions in films provided above andbelow an insulating film are parallel, and stores data in a highresistance state when the spin directions are anti-parallel. Therefore,the MTJ element has a completely different principle from the memoryincluding an oxide semiconductor, which is described in this embodiment.Table 1 shows the comparison between the MTJ element and thesemiconductor device of this embodiment.

TABLE 1 Spintronics (MTJ element) OS/Si 1) Heat resistance Curietemperature Process temperature 500° C. (Reliable at 150° C.) 2) Drivingmethod Current driving Voltage drive 3) Principle of Changing SpinDirection On/off FET writing principle of Magnetic Substance 4) Si LSISuitable for bipolar Suitable for MOS LSI LSI (MOS transistor ispreferred in high integration circuit (Bipolar transistor is unsuitablefor High Integration), W is large) 5) Overhead High (Due to Smaller by 2to 3 or large Joule heat) more orders of magnitude (Charge and dischargeof parasitic capacitance) 6) Non-volatility Utilizing Spin Utilizingsmall off-state current 7) Number of times Unlimited Unlimited ofreading operation 8) 3D conversion Difficult Easy (No limitation on (2layers at most) the number of layers) 9) Degree of 4 F.² to 15 F.²Depending on the integration (F.²) number of layers for 3D conversion(Heat resistance in upper OSFET process is needed) 10) Material Rareearth with OS material magnetic property 11) Cost per bit High Low (Alittle high depending on material (e.g., In) for OS) 12) Resistance toLow High magnetic field

The MTJ element is disadvantageous in that its magnetic property is lostwhen the temperature is higher than or equal to the Curie temperaturebecause it contains a magnetic material. In addition, the MTJ element iscompatible with a silicon bipolar device because current driving isemployed; however, the bipolar device is unsuitable for highintegration. Further, there is a problem in that power consumption isincreased by an increase of memory capacity, though the writing currentof the MTJ element is extremely low.

In principal, the MTJ element has low resistance to a magnetic field,and the spin direction is easily changed when the MTJ element is exposedto a high magnetic field. In addition, it is necessary to controlmagnetic fluctuation which is caused by nanoscaling of a magnetic bodyused for the MTJ element.

Further, a rare earth element is used for the MTJ element; thus, itrequires special attention to incorporate a process of forming the MTJelement in a process of forming a silicon semiconductor that issensitive to metal contamination. Further, the MTJ element is expensivein terms of the material cost per bit.

On the other hand, the transistor including an oxide semiconductor,which is described in this embodiment, has the same element structureand operation principle as a silicon MOSFET except that a semiconductormaterial for a channel is a metal oxide. Further, the transistorincluding an oxide semiconductor is not affected by a magnetic field anddoes not cause soft errors. This shows that the transistor is highlycompatible with a silicon integrated circuit.

As shown in Table 1, the memory in which the transistor including anoxide semiconductor and the transistor including silicon are combinedhas advantages over the spintronics device in many aspects such as theheat resistance, the 3D conversion (stacked-layer structure of three ormore layers), and the resistance to a magnetic field.

Note that “overhead” refers to power consumed when data escapes andreturns.

As described above, the use of the memory including an oxidesemiconductor, which has more advantages than the spintronics devicemakes it possible to reduce power consumption of a CPU.

This embodiment can be implemented in combination with any of the otherembodiments as appropriate.

Embodiment 10

The use of the semiconductor device according to one embodiment of thepresent invention makes it possible to provide electronic devices inwhich leakage current is suppressed and power consumption is low. Inparticular, in the case of a portable electronic device which hasdifficulty in continuously receiving power, an advantage of an increasein continuous operating time can be obtained when a semiconductor devicewith low power consumption according to an embodiment of the presentinvention is added as a component of the device.

The semiconductor device according to an embodiment of the presentinvention can be used for display devices, personal computers, or imagereproducing devices provided with recording media (typically, deviceswhich reproduce the content of recording media such as digital versatilediscs (DVDs) and have displays for displaying the reproduced images).Other than the above, as examples of an electronic appliance which caninclude the semiconductor device according to one embodiment of thepresent invention, the following are given: mobile phones, game machinesincluding portable game machines, portable information terminals, e-bookreaders, video cameras, digital still cameras, goggle-type displays(head mounted displays), navigation systems, audio reproducing devices(e.g., car audio systems and digital audio players), copiers,facsimiles, printers, multifunction printers, automated teller machines(ATM), vending machines, and the like.

The case where the semiconductor device according to one embodiment ofthe present invention is applied to electronic devices such as a mobilephone, a smartphone, and an e-book reader will be described

FIG. 17 is a block diagram of a portable electronic device. The portableelectronic device illustrated in FIG. 17 includes an RF circuit 421, ananalog baseband circuit 422, a digital baseband circuit 423, a battery424, a power supply circuit 425, an application processor 426, a flashmemory 430, a display controller 431, a memory circuit 432, a display433, a touch sensor 439, an audio circuit 437, a keyboard 438, and thelike. The display 433 includes a display portion 434, a source driver435, and a gate driver 436. The application processor 426 includes a CPU427, a DSP 428, and an interface 429. For example, when any of thesemiconductor devices described in the above embodiments is used for anyor all of the CPU 427, the digital baseband circuit 423, the memorycircuit 432, the DSP 428, the interface 429, the display controller 431,and the audio circuit 437, leakage current can be suppressed, whichresults in a reduction in the power consumption.

FIG. 18 is a block diagram of an e-book reader. The e-book readerincludes a battery 451, a power supply circuit 452, a microprocessor453, a flash memory 454, an audio circuit 455, a keyboard 456, a memorycircuit 457, a touch panel 458, a display 459, and a display controller460. The microprocessor 453 includes a CPU 461, a DSP 462, and aninterface (IF) 463. For example, when any of the semiconductor devicesdescribed in the above embodiments is used for any of or all of the CPU461, the audio circuit 455, the memory circuit 457, the displaycontroller 460, the DSP 462, and the interface 463, leakage current canbe reduced, which results in a reduction in the power consumption.

This embodiment can be implemented in combination with any of the otherembodiments as appropriate.

Embodiment 11

The actually measured field-effect mobility of an insulated gatetransistor can be lower than its ideal mobility because of a variety ofreasons; this phenomenon occurs not only in the case of using an oxidesemiconductor.

One of the factors that reduce the mobility is a defect inside asemiconductor or a defect at an interface between the semiconductor andan insulating film. When a Levinson model is used, the field-effectmobility on the assumption that no defect exists inside thesemiconductor can be calculated theoretically.

Assuming that the original mobility and the measured field-effectmobility of a semiconductor are μ₀ and μ, respectively, and a potentialbarrier (such as a grain boundary) exists in the semiconductor, themeasured field-effect mobility is expressed as Formula A in FIG. 27A.

In Formula A, E represents the height of the potential barrier, krepresents the Boltzmann constant, and T represents the absolutetemperature.

When the potential barrier is assumed to be attributed to a defect, theheight of the potential barrier is expressed as Formula B in FIG. 27Baccording to the Levinson model.

In Formula B, e represents the elementary charge, N represents theaverage defect density per unit area in a channel, ∈ represents thepermittivity of the semiconductor, n represents the number of carriersper unit area in the channel, C_(ox) represents the capacitance per unitarea, V_(g) represents the gate voltage, and t represents the thicknessof the channel.

In the case where the thickness of the semiconductor layer is less thanor equal to 30 nm, the thickness of the channel may be regarded as beingthe same as the thickness of the semiconductor layer.

The drain current I_(d) in a linear region is expressed by Formula C inFIG. 27C.

In Formula C, L represents the channel length and W represents thechannel width, and L and W are each 10 μm.

In addition, V_(d) represents the drain voltage.

When dividing both sides of the formula C by V_(g) and then takinglogarithms of both sides, Formula D in FIG. 27D can be obtained.

The right side of Formula C is a function of V_(g).

From Formula D, it is found that the defect density N can be obtainedfrom the slope of a line in a graph that is obtained by plotting actualmeasured values with ln(I_(d)/V_(g)) as the ordinate and 1/V_(g) as theabscissa.

In other words, the defect density can be evaluated from the I_(d)-V_(g)characteristics of the transistor.

The defect density N of an oxide semiconductor in which the ratio ofindium (In) to tin (Sn) and zinc (Zn) is 1:1:1 is approximately1×10¹²/cm².

On the basis of the defect density obtained in this manner, or the like,μ₀ can be calculated to be 120 cm²/Vs.

The measured mobility of an In—Sn—Zn oxide including a defect isapproximately 35 cm²/Vs.

However, assuming that no defect exists inside the semiconductor and atthe interface between the semiconductor and an insulating film, themobility μ₀ of the oxide semiconductor is expected to be 120 cm²/Vs.

Note that even when no defect exists inside a semiconductor, scatteringat an interface between a channel and a gate insulating film affects thetransport property of the transistor. In other words, the mobility μ₁ ata position that is distance x away from the interface between thechannel and the gate insulating film can be expressed by Formula E inFIG. 27E.

In Formula E, D represents the electric field in the gate direction, andB and G are constants. Note that B and G can be obtained from actualmeasurement results; according to the above measurement results, B is4.75×10⁷ cm/s and G is 10 nm (the depth to which the influence ofinterface scattering reaches).

When D is increased (i.e., when the gate voltage is increased), thesecond term of Formula E is increased and accordingly the mobility μ₁ isdecreased.

FIG. 19 shows calculation results E of the mobility μ₂ of a transistorwhose channel includes an ideal oxide semiconductor without a defectinside the semiconductor.

For the calculation, Sentaurus Device which is software manufactured bySynopsys, Inc. was used.

For the calculation, the band gap, the electron affinity, the relativepermittivity, and the thickness of the oxide semiconductor were assumedto be 2.8 eV, 4.7 eV, 15, and 15 nm, respectively.

These values were obtained by measurement of a thin film that was formedby a sputtering method.

Further, the work functions of a gate, a source, and a drain wereassumed to be 5.5 eV, 4.6 eV, and 4.6 eV, respectively.

The thickness of a gate insulating film was assumed to be 100 nm, andthe relative permittivity thereof was assumed to be 4.1. The channellength and the channel width were each assumed to be 10 μm, and thedrain voltage V_(d) was assumed to be 0.1 V.

As shown in the calculation results E, the mobility has a peak ofgreater than or equal to 100 cm²/Vs at a gate voltage that is a littleover 1 V and is decreased as the gate voltage becomes higher because theinfluence of interface scattering is increased.

Note that in order to reduce interface scattering, it is desirable thata surface of the semiconductor layer be flat at the atomic level (atomiclayer flatness).

Characteristics of minute transistors which are manufactured using anoxide semiconductor having such mobility were calculated.

The transistor used for calculation includes a channel formation regionprovided between a pair of n-type semiconductor regions in the oxidesemiconductor layer.

The calculation was performed under the condition that the resistivityof the pair of n-type semiconductor regions is 2×10⁻³ Ωcm.

The calculation was performed under the condition that the channellength was 33 nm and the channel width was 40 nm.

Further, a sidewall is provided on the side wall of the gate electrode.

The calculation was performed under the condition that part of thesemiconductor region which overlaps with the sidewall is an offsetregion.

For the calculation, Sentaurus Device which is software manufactured bySynopsys, Inc. was used.

FIGS. 20A to 20C show the gate voltage (V_(g): a potential differencebetween the gate and the source) dependence of the drain current (I_(d),indicated by a solid line) and the mobility (μ, indicted by a dottedline) of the transistor.

The drain current I_(d) is obtained by calculation under the assumptionthat the drain voltage (a potential difference between the drain and thesource) is +1 V and the mobility μ is obtained by calculation under theassumption that the drain voltage is +0.1 V.

FIG. 20A shows the calculation result under the condition that thethickness of the gate insulating film is 15 nm.

FIG. 20B shows the calculation result under the condition that thethickness of the gate insulating film is 10 nm.

FIG. 20C shows the calculation result under the condition that thethickness of the gate insulating film is 5 nm.

As the gate insulating film is thinner, the drain current I_(d)(off-state current) particularly in an off state is significantlydecreased.

In contrast, there is no noticeable change in the peak value of themobility μ and the drain current I_(d) (on-state current) in an onstate.

FIGS. 21A to 21C show the gate voltage V_(g) dependence of the draincurrent I_(d) (indicated by a solid line) and the mobility μ (indicatedby a dotted line) of the transistor where the offset length (sidewalllength) L_(off) is 5 nm.

The drain current I_(d) is obtained by calculation under the assumptionthat the drain voltage is +1 V and the mobility μ is obtained bycalculation under the assumption that the drain voltage is +0.1 V.

FIG. 21A shows the calculation result under the condition that thethickness of the gate insulating film is 15 nm

FIG. 21B shows the calculation result under the condition that thethickness of the gate insulating film is 10 nm

FIG. 21C shows the calculation result under the condition that thethickness of the gate insulating film is 5 nm

FIGS. 22A to 22C show the gate voltage dependence of the drain currentI_(d) (indicated by a solid line) and the mobility μ (indicated by adotted line) under the condition that the offset length (sidewalllength) L_(off) is 15 nm.

The drain current I_(d) is obtained by calculation under the assumptionthat the drain voltage is +1 V and the mobility μ is obtained bycalculation under the assumption that the drain voltage is +0.1 V.

FIG. 22A shows the calculation result under the condition that thethickness of the gate insulating film is 15 nm.

FIG. 22B shows the calculation result under the condition that thethickness of the gate insulating film is 10 nm.

FIG. 22C shows the calculation result under the condition that thethickness of the gate insulating film is 5 nm.

In either of the structures, as the gate insulating film is thinner, theoff-state current is significantly decreased, whereas no noticeablechange arises in the peak value of the mobility μ and the on-statecurrent.

The peak of the mobility m is about 80 cm²/Vs in FIGS. 20A to 20C, about60 cm²/Vs in FIGS. 21A to 21C, and about 40 cm²/Vs in FIGS. 22A to 22C;thus, the peak of the mobility μ decreases as the offset length L_(off)is increased.

Further, the same applies to the off-state current.

The on-state current is also decreased as the offset length L_(off) isincreased; however, the decrease in the on-state current is much moregradual than the decrease in the off-state current.

Further, the graphs show that in either of the structures, the draincurrent exceeds 10 μA, which is required in a memory element and thelike, at a gate voltage of around 1 V.

This embodiment can be implemented in combination with any of the otherembodiments as appropriate.

Example 1

A transistor including an oxide semiconductor containing In, Sn, and Zn(In—Sn—Zn-based oxide semiconductor) can have favorable characteristicsby deposition of the oxide semiconductor while heating a substrate or byheat treatment after deposition of an oxide semiconductor film.

Note that each of In, Sn, and Zn is preferably contained in acomposition ratio at greater than or equal to 5 atomic %.

By intentionally heating the substrate after the deposition of the oxidesemiconductor film including In, Sn, and Zn, the field-effect mobilityof the transistor can be improved.

The threshold voltage of an n-channel transistor can be positivelyshifted in the positive direction.

When the threshold voltage of the n-channel transistor is positivelyshifted, an absolute value of voltage used for holding an off state ofthe n-channel transistor can be decreased, and power consumption can bereduced.

Further, when the threshold voltage of the n-channel transistor ispositively shifted, and the threshold voltage is greater than or equalto 0 V, a normally-off transistor can be formed.

Characteristics of transistors using an oxide semiconductor containingIn, Sn, and Zn will be described below.

(Common Conditions of Samples A to C)

An oxide semiconductor layer was formed over a substrate to have athickness of 15 nm under the following conditions: a target having acomposition ratio of In:Sn:Zn=1:1:1 is used; the gas flow rate isAr/O₂=6/9 sccm; the deposition pressure is 0.4 Pa; and the depositionpower is 100 W.

Next, the oxide semiconductor layer was etched in an island shape.

Then, a tungsten layer was deposited over the oxide semiconductor layerto have a thickness of 50 nm, and was etched, so that a source electrodeand a drain electrode were formed.

Next, a silicon oxynitride film (SiON) was formed so as to have athickness of 100 nm, using silane gas (SiH₄) and dinitrogen monoxide(N₂O) by a plasma CVD method, so that the silicon oxynitride film servedas a gate insulating layer.

Then, a gate electrode was formed in the following manner: a tantalumnitride layer was formed to have a thickness of 15 nm; a tungsten layerwas formed to have a thickness of 135 nm; and these were etched.

After that, a silicon oxynitride (SiON) film with a thickness of 300 nmand a polyimide film with a thickness of 1.5 μm were formed as aninterlayer insulating film by a plasma CVD method.

Next, a pad for measurement was formed in the following manner: acontact hole was formed in the interlayer insulating film; a firsttitanium film was formed to have a thickness of 50 nm; an aluminum filmwas formed to have a thickness of 100 nm; a second titanium film wasformed to have a thickness of 50 nm; and these films were etched.

In this manner, a semiconductor device including a transistor wasmanufactured.

(Sample A)

In Sample A, heating was not performed on the substrate during thedeposition of the oxide semiconductor layer.

Further, in Sample A, heat treatment was not performed after thedeposition of the oxide semiconductor layer and before the etching ofthe oxide semiconductor layer.

(Sample B)

In Sample B, the oxide semiconductor layer was deposited with thesubstrate heated at 200° C.

Further, in Sample B, heat treatment was not performed after thedeposition of the oxide semiconductor layer and before the etching ofthe oxide semiconductor layer.

The oxide semiconductor layer was deposited while the substrate washeated in order to remove hydrogen serving as a donor in the oxidesemiconductor layer.

(Sample C)

In Sample C, the oxide semiconductor layer was deposited with thesubstrate heated at 200° C.

Further, in Sample C, after the oxide semiconductor layer was depositedand before the oxide semiconductor layer was etched, heat treatment in anitrogen atmosphere was performed at 650° C. for 1 hour and then heattreatment in an oxygen atmosphere was performed at 650° C. for 1 hour.

The heat treatment at 650° C. for 1 hour in a nitrogen atmosphere wasperformed in order to remove hydrogen serving as a donor in the oxidesemiconductor layer.

Oxygen is also removed by the heat treatment for removing hydrogen whichserves as a donor in the oxide semiconductor layer, causing oxygenvacancy serving as a carrier in the oxide semiconductor layer.

Hence, heat treatment was performed at 650° C. for 1 hour in an oxygenatmosphere to reduce oxygen vacancy.

(Characteristics of Transistors of Sample A to Sample C)

FIG. 23A shows initial characteristics of a transistor of Sample A.

FIG. 23B shows initial characteristics of a transistor of Sample B.

FIG. 23C shows initial characteristics of a transistor of Sample C.

The field-effect mobility of the transistor of Sample A was 18.8cm²/Vsec.

The field-effect mobility of the transistor of Sample B was 32.2cm²/Vsec.

The field-effect mobility of the transistor of Sample C was 34.5cm²/Vsec.

According to observation of cross sections of oxide semiconductorlayers, which were formed by deposition methods similar to those ofSamples A to C, with a transmission electron microscope (TEM),crystallinity was observed in samples formed by the deposition methodssimilar to those of Sample B and Sample C, substrates of which wereheated during deposition.

Further, surprisingly, the samples, the substrates of which were heatedduring deposition, had a non-crystalline portion and a crystallineportion having a c-axis crystalline orientation.

In a conventional polycrystal, crystals in the crystalline portion arenot aligned and point in different directions. This means that thesamples, the substrates of which were heated during deposition, have anovel structure.

Comparison between FIGS. 23A to 23C brings understanding that heattreatment performed on the substrate during or after deposition canremove an hydrogen element serving as a donor, thereby shifting thethreshold voltage of the n-channel transistor in the positive direction.

That is, the threshold voltage of Sample B in which heating wasperformed on the substrate during deposition is shifted in the positivedirection as compared to the threshold voltage of Sample A in whichheating was not performed on the substrate during deposition.

In addition, comparison between Sample B and Sample C, the substrates ofwhich were heated during deposition, shows that the threshold voltage ofSample C with the heat treatment after deposition is more shifted in thepositive direction than the threshold voltage of Sample B without theheat treatment after deposition.

As the temperature of heat treatment is higher, a light element such ashydrogen is removed more easily; therefore, hydrogen is more likely tobe removed as the temperature of heat treatment is higher.

It is therefore likely that the threshold voltage can be more shifted inthe positive direction by further increasing the temperature of the heattreatment during or after deposition.

(Results of the Gate BT Stress Test of Sample B and Sample C)

The gate BT stress test was performed on Sample B (without heattreatment after deposition) and Sample C (with heat treatment afterdeposition).

First, the V_(gs)-I_(ds) characteristics of each transistor weremeasured at a substrate temperature of 25° C. and V_(ds) of 10 V tomeasure the characteristics of the transistor before heating andapplication of high positive voltage.

Then, the substrate temperature was set to 150° C. and V_(ds) was set to0.1 V.

After that, V_(gs) of 20 V was applied to the gate insulating film andthe condition was kept for 1 hour.

Then, V_(gs) was set to 0 V.

Next, the V_(gs)-I_(ds) characteristics of the transistor were measuredat a substrate temperature of 25° C. and V_(ds) of 10 V to measure thecharacteristics of the transistor after heating and application of highpositive voltage.

Comparison of the characteristics of the transistor before and afterheating and application of high positive voltage as described above isreferred to as a positive BT test.

On the other hand, first, the V_(gs)-I_(ds) characteristics of eachtransistor were measured at a substrate temperature of 25° C. and V_(ds)of 10 V to measure the characteristics of the transistor before heatingand application of high negative voltage.

Then, the substrate temperature was set to 150° C. and V_(ds) was set to0.1 V.

After that, −20 V of V_(gs) was applied to the gate insulating film andthe condition was kept for 1 hour.

Then, V_(gs) was set to 0 V.

On the other hand, the V_(gs)-I_(ds) characteristics of each transistorwere measured at a substrate temperature of 25° C. and V_(ds) of 10 V tomeasure the characteristics of the transistor before heating andapplication of high negative voltage.

Comparison of the characteristics of the transistor before and afterheating and application of high negative voltage as described above isreferred to as a negative BT test.

FIG. 24A shows results of the positive BT test of Sample B, and FIG. 24Bshows results of the negative BT test of Sample B.

FIG. 25A shows results of the positive BT test of Sample C, and FIG. 25Bshows results of the negative BT test of Sample C.

The positive BT test and the negative BT test are tests used todetermine deterioration of the transistors; FIGS. 24A and 25A show thatthe threshold voltage can be shifted in the positive direction byperforming at least the positive BT test.

In particular, FIG. 24A shows that the positive BT test made thetransistor a normally-off transistor.

It is therefore found that performing the positive BT test in additionto the heat treatment in the manufacturing process of the transistormakes it possible to promote a shift of the threshold voltage in thepositive direction and consequently a normally-off transistor can bemanufactured.

FIG. 26 shows the relation between the off-state current of thetransistor of Sample A and the inverse of the substrate temperature(absolute temperature) at measurement.

In FIG. 26, the horizontal axis represents a value (1000/T) obtained bymultiplying the inverse of the substrate temperature at measurement by1000.

The amount of current in FIG. 26 is the amount of current per micrometerin the channel width.

The off-state current was lower than or equal to 1×10⁻¹⁹ A at asubstrate temperature of 125° C. (1000/T is about 2.51).

The off-state current was less than or equal to 1×10⁻²⁰ A at a substratetemperature of 85° C. (1000/T is about 2.79).

That is, the off-state current of the transistor containing an oxidesemiconductor is found to be extremely low as compared to a transistorcontaining a silicon semiconductor.

The off-state current is decreased as the temperature is lower;therefore, it is clear that lower off-state current is obtained at roomtemperature.

The contents of this example or part thereof can be implemented incombination with any of the embodiments.

This application is based on Japanese Patent Application serial no.2011-112957 filed with Japan Patent Office on May 20, 2011, the entirecontents of which are hereby incorporated by reference.

EXPLANATION OF REFERENCE

11: transistor, 12: capacitor, 100: semiconductor device, 110:transistor, 111: transistor, 112: transistor, 113: transistor, 115:inverter, 116: output terminal, 133: transistor, 300: semiconductordevice, 310: transistor, 311: capacitor, 312: resistor, 313: node, 400:semiconductor device, 410: transistor, 421: RF circuit, 422: analogbaseband circuit, 423: digital baseband circuit, 424: battery, 425:power supply circuit, 426: application processor, 427: CPU, 428: DSP,429: interface, 430: flash memory, 431: display controller, 432: memorycircuit, 433: display, 434: display portion, 435: source driver, 436:gate driver, 437: audio circuit, 438: keyboard, 439: touch sensor, 451:battery, 452: power supply circuit, 453: microprocessor, 454: flashmemory, 455: audio circuit, 456: keyboard, 457: memory circuit, 458:touch panel, 459: display, 460: display controller, 461: CPU, 462: DSP,463: interface, 500: semiconductor device, 512: transistor, 520:inverter, 601: three-state inverter circuit, 602: three-state invertercircuit, 603: three-state inverter circuit, 700: substrate, 701:insulating film, 702: semiconductor film, 703: gate insulating film,704: semiconductor layer, 707: gate electrode, 709: impurity region,710: channel formation region, 712: insulating film, 713: insulatingfilm, 716: oxide semiconductor layer, 719: conductive layer, 720:conductive layer, 721: gate insulating film, 722: gate electrode, 724:insulating film, 726: wiring, 727: insulating film, 908:high-concentration region, 918: high-concentration region, 919: channelformation region, 928: high-concentration region, 929: low-concentrationregion, 930: sidewall, 931: channel formation region, 948:high-concentration region, 949: low-concentration region, 950: sidewall,951: channel formation region, 7301: conductive layer, 7302: insulatingfilm, 7303: conductive film, 9900: substrate, 9901: ALU, 9902: ALUcontroller, 9903: instruction□decoder, 9904: interrupt□controller, 9905:timing□controller, 9906: register, 9907: register□controller, 9908:Bus□I/F, 9909: ROM, and 9920: ROM□I/F.

1. (canceled)
 2. A semiconductor device comprising: first to fourthtransistors; wherein a gate of the first transistor is electricallyconnected to a gate of the second transistor, wherein one of a sourceand a drain of the first transistor is electrically connected to one ofa source and a drain of the second transistor, wherein the other of thesource and the drain of the first transistor is electrically connectedto one of a source and a drain of the third transistor, wherein theother of the source and the drain of the second transistor iselectrically connected to one of a source and a drain of the fourthtransistor, and wherein at least one of the first to fourth transistorscomprises an oxide semiconductor.
 3. The semiconductor device accordingto claim 2, wherein the first transistor and the second transistor areprovided over a substrate or in the substrate, and wherein the thirdtransistor and the fourth transistor are provided over the firsttransistor and the second transistor.
 4. The semiconductor deviceaccording to claim 2, wherein the oxide semiconductor is anIn—Ga—Zn-based oxide semiconductor or an In—Sn—Zn-based oxidesemiconductor.
 5. The semiconductor device according to claim 2, whereinthe first transistor has p-type conductivity and the second transistorhas n-type conductivity.
 6. A semiconductor device comprising: first tofifth transistors; a capacitor; and a resistor, wherein a gate of thefirst transistor is electrically connected to a gate of the secondtransistor, wherein one of a source and a drain of the first transistoris electrically connected to one of a source and a drain of the secondtransistor, wherein one of a source and a drain of the third transistoris electrically connected to the other of the source and the drain ofthe first transistor, wherein the other of the source and the drain ofthe third transistor is electrically connected to a wiring having afunction of supplying first potential, wherein a gate of the thirdtransistor is electrically connected to a first terminal of thecapacitor, one of a source and a drain of the fifth transistor, and afirst terminal of the resistor, wherein one of a source and a drain ofthe fourth transistor is electrically connected to the other of thesource and the drain of the second transistor, wherein the other of thesource and the drain of the fourth transistor is electrically connectedto a wiring having a function of supplying second potential lower thanthe first potential, wherein a gate of the fourth transistor iselectrically connected to a second terminal of the capacitor and a firstwiring, wherein the other of the source and the drain of the fifthtransistor is electrically connected to the wiring having the functionof supplying the first potential, wherein a gate of the fifth transistoris electrically connected to a second wiring, and wherein the thirdtransistor, the fourth transistor, and the fifth transistor comprise anoxide semiconductor.
 7. The semiconductor device according to claim 6,wherein the first transistor and the second transistor are provided overa substrate or in the substrate, and wherein the third transistor andthe fourth transistor are provided over the first transistor and thesecond transistor.
 8. The semiconductor device according to claim 6,wherein the first transistor and the second transistor are provided overa substrate or in the substrate, wherein the third transistor and thefourth transistor are provided over the first transistor and the secondtransistor, and wherein the capacitor is provided over the thirdtransistor and the fourth transistor.
 9. The semiconductor deviceaccording to claim 6, wherein the oxide semiconductor is anIn—Ga—Zn-based oxide semiconductor or an In—Sn—Zn-based oxidesemiconductor.
 10. The semiconductor device according to claim 6,wherein the first transistor has p-type conductivity and the secondtransistor has n-type conductivity.
 11. A semiconductor devicecomprising: first to sixth transistors; and a capacitor, wherein a gateof the first transistor is electrically connected to a gate of thesecond transistor, wherein one of a source and a drain of the firsttransistor is electrically connected to one of a source and a drain ofthe second transistor, wherein one of a source and a drain of the thirdtransistor is electrically connected to the other of the source and thedrain of the first transistor, wherein the other of the source and thedrain of the third transistor is electrically connected to a wiringhaving a function of supplying first potential, wherein a gate of thethird transistor is electrically connected to a first terminal of thecapacitor, one of a source and a drain of the fifth transistor and oneof a source and a drain of the sixth transistor, wherein one of a sourceand a drain of the fourth transistor is electrically connected to theother of the source and the drain of the second transistor, wherein theother of the source and the drain of the fourth transistor iselectrically connected to a wiring having a function of supplying secondpotential lower than the first potential, wherein a gate of the fourthtransistor is electrically connected to a second terminal of thecapacitor and a first wiring, wherein the other of the source and thedrain of the fifth transistor is electrically connected to the wiringhaving the function of supplying the first potential, wherein a gate ofthe fifth transistor is electrically connected to a second wiring,wherein the other of the source and the drain of the sixth transistor iselectrically connected to the wiring having the function of supplyingthe second potential, wherein a gate of the sixth transistor iselectrically connected to a third wiring, and wherein the thirdtransistor, the fourth transistor, the fifth transistor, and the sixthtransistor comprise an oxide semiconductor.
 12. The semiconductor deviceaccording to claim 11, wherein the first transistor and the secondtransistor are provided over a substrate or in the substrate, andwherein the third transistor and the fourth transistor are provided overthe first transistor and the second transistor.
 13. The semiconductordevice according to claim 11, wherein the first transistor and thesecond transistor are provided over a substrate or in the substrate,wherein the third transistor and the fourth transistor are provided overthe first transistor and the second transistor, and wherein thecapacitor is provided over the third transistor and the fourthtransistor.
 14. The semiconductor device according to claim 11, whereinthe oxide semiconductor is an In—Ga—Zn-based oxide semiconductor or anIn—Sn—Zn-based oxide semiconductor.
 15. The semiconductor deviceaccording to claim 11, wherein the first transistor has p-typeconductivity and the second transistor has n-type conductivity.